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CuBi2O4 Prepared by the Polymerized Complex Method for Gas-Sensing Applications
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-04-11 00:00:00 , DOI: 10.1021/acsami.8b02439 Yun-Hyuk Choi 1 , Dai-Hong Kim 2 , Seong-Hyeon Hong 2
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-04-11 00:00:00 , DOI: 10.1021/acsami.8b02439 Yun-Hyuk Choi 1 , Dai-Hong Kim 2 , Seong-Hyeon Hong 2
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Multicomponent oxides can be extensively explored as alternative gas-sensing materials to binary oxides with their structural and compositional versatilities. In this work, the gas-sensing properties of CuBi2O4 have been investigated toward various reducing gases (C2H5OH, NH3, H2, CO, and H2S) and oxidizing gas (NO2) for the first time. For this, the powder synthesis has been developed using the polymerized complex method (Pechini method) to obtain a single-phase polycrystalline CuBi2O4. The defect, optical, and electronic properties in the prepared CuBi2O4 powder were modulated by varying the calcination temperature from 500 to 700 °C. Noticeably, a high concentration of Cu+–oxygen vacancy (
) defect complexes and isolated Cu2+ ion clusters was found in the 500 °C-calcined CuBi2O4, where they were removed through air calcination at higher temperatures (up to 700 °C) while making the compound more stoichiometric. The change in the intrinsic defect concentration with the calcination temperature led to the variation of the electronic band gap energy and hole concentration in CuBi2O4 with the polaronic hopping conduction (activation energy = 0.43 eV). The CuBi2O4 sensor with 500 °C-calcined powder showed the highest gas responses (specifically, 10.4 toward 1000 ppm C2H5OH at the operating temperature of 400 °C) with the highest defect concentration. As a result, the gas-sensing characteristics of CuBi2O4 are found to be dominantly affected by the intrinsic defect concentration, which is controlled by the calcination temperature. Toward reducing H2S and oxidizing NO2 gases, the multiple reactions arising simultaneously on the surface of the CuBi2O4 sensor govern its response behavior, depending on the gas concentration and the operating temperature. We believe that this work can be a cornerstone for understanding the effect of chemical defect on the gas-sensing characteristics in multicomponent oxides.
中文翻译：
聚合络合物法制备的CuBi 2 O 4用于气体传感应用
可以广泛探索多组分氧化物作为二元氧化物的替代气敏材料，并且具有结构和组成方面的通用性。在这项工作中，已经研究了CuBi 2 O 4对各种还原性气体（C 2 H 5 OH，NH 3，H 2，CO和H 2 S）和氧化性气体（NO 2）的气敏特性。第一次。为此，已经使用聚合络合物方法（Pechini方法）开发了粉末合成以获得单相多晶CuBi 2 O 4。制备的CuBi 2中的缺陷，光学和电子性质通过将煅烧温度从500更改为700°C来调制O 4粉末。值得注意的是，在500°C煅烧的CuBi 2 O 4中发现了高浓度的Cu +-氧空位（）缺陷配合物和孤立的Cu 2+离子簇，在较高的温度下（最高700 °C），同时使化合物的化学计量更高。本征缺陷浓度随煅烧温度的变化导致CuBi 2 O 4中电子带隙能和空穴浓度随极化跃迁传导而变化（活化能= 0.43 eV）。CuBi 2 O具有500°C煅烧粉末的4传感器显示出最高的气体响应（具体而言，在400°C的工作温度下，向1000 ppm C 2 H 5 OH的响应为10.4 ）和最高的缺陷浓度。结果，发现CuBi 2 O 4的气敏特性主要受到固有煅烧温度控制的固有缺陷浓度的影响。为了还原H 2 S和氧化NO 2气体，在CuBi 2 O 4的表面上同时发生多种反应传感器根据气体浓度和工作温度控制其响应行为。我们认为，这项工作可以成为了解化学缺陷对多组分氧化物中气敏特性的影响的基石。
更新日期：2018-04-11
) defect complexes and isolated Cu2+ ion clusters was found in the 500 °C-calcined CuBi2O4, where they were removed through air calcination at higher temperatures (up to 700 °C) while making the compound more stoichiometric. The change in the intrinsic defect concentration with the calcination temperature led to the variation of the electronic band gap energy and hole concentration in CuBi2O4 with the polaronic hopping conduction (activation energy = 0.43 eV). The CuBi2O4 sensor with 500 °C-calcined powder showed the highest gas responses (specifically, 10.4 toward 1000 ppm C2H5OH at the operating temperature of 400 °C) with the highest defect concentration. As a result, the gas-sensing characteristics of CuBi2O4 are found to be dominantly affected by the intrinsic defect concentration, which is controlled by the calcination temperature. Toward reducing H2S and oxidizing NO2 gases, the multiple reactions arising simultaneously on the surface of the CuBi2O4 sensor govern its response behavior, depending on the gas concentration and the operating temperature. We believe that this work can be a cornerstone for understanding the effect of chemical defect on the gas-sensing characteristics in multicomponent oxides.
中文翻译：
聚合络合物法制备的CuBi 2 O 4用于气体传感应用
可以广泛探索多组分氧化物作为二元氧化物的替代气敏材料，并且具有结构和组成方面的通用性。在这项工作中，已经研究了CuBi 2 O 4对各种还原性气体（C 2 H 5 OH，NH 3，H 2，CO和H 2 S）和氧化性气体（NO 2）的气敏特性。第一次。为此，已经使用聚合络合物方法（Pechini方法）开发了粉末合成以获得单相多晶CuBi 2 O 4。制备的CuBi 2中的缺陷，光学和电子性质通过将煅烧温度从500更改为700°C来调制O 4粉末。值得注意的是，在500°C煅烧的CuBi 2 O 4中发现了高浓度的Cu +-氧空位（
）缺陷配合物和孤立的Cu 2+离子簇，在较高的温度下（最高700 °C），同时使化合物的化学计量更高。本征缺陷浓度随煅烧温度的变化导致CuBi 2 O 4中电子带隙能和空穴浓度随极化跃迁传导而变化（活化能= 0.43 eV）。CuBi 2 O具有500°C煅烧粉末的4传感器显示出最高的气体响应（具体而言，在400°C的工作温度下，向1000 ppm C 2 H 5 OH的响应为10.4 ）和最高的缺陷浓度。结果，发现CuBi 2 O 4的气敏特性主要受到固有煅烧温度控制的固有缺陷浓度的影响。为了还原H 2 S和氧化NO 2气体，在CuBi 2 O 4的表面上同时发生多种反应传感器根据气体浓度和工作温度控制其响应行为。我们认为，这项工作可以成为了解化学缺陷对多组分氧化物中气敏特性的影响的基石。
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