Organic-inorganic hybrid perovskite materials, such as CH₃NH₃PbI₃, had been widely applied in resistive switching access memory device. In this work, we demonstrated nonvolatile memory devices based on CH₃NH₃PbI₃ that had been passivated by oleic acid, which reduced the defects of perovskite layer, causing storage window and stability improved. Meanwhile, the device showed good endurance properties and outstanding reproducibility. The fitting results indicated that the properties changed from space-charge limited conduction to Schottky emission at HRS. This illustrated that the concentration of defect in perovskite layer was decreased and the mechanism of resistive switching transformed from ion migration to barrier modulation. These results suggested that perovskite memory based on oleic acid passivation had great potential to be used in high-performance memory devices.

诸如CH ₃ NH ₃ PbI _3的有机-无机杂化钙钛矿材料已被广泛应用于电阻开关存取存储器件中。在这项工作中，我们展示了基于CH ₃ NH ₃ PbI _3的非易失性存储器件经油酸钝化处理后，减少了钙钛矿层的缺陷，增加了储存窗口，提高了稳定性。同时，该装置显示出良好的耐久性能和出色的再现性。拟合结果表明，HRS的性质从空间电荷限制传导变为肖特基发射。这说明钙钛矿层中缺陷的浓度降低，并且电阻转换的机理从离子迁移转变为势垒调制。这些结果表明，基于油酸钝化的钙钛矿存储具有巨大的潜力，可用于高性能存储设备。