Journal of Alloys and Compounds ( IF 5.8 ) Pub Date : 2018-04-11 Faqiang Zhang, Olivia Wahyudi, Zhifu Liu, Hui Gu, Yongxiang Li
We firstly report an abnormal intergrowth bismuth layer-structured phase, (Bi3TiNbO9)1(Bi4Ti3O12)2, or BTN1BiT2, with non-equal parent blocks. The HRTEM analysis shows that such compound has a long-range-ordered -233- sequence. The crystal structure has been solved in orthorhombic space group A21am with a = 5.458 Å, b = 5.415 Å and c = 91.03 Å. Double dielectric peaks at 668 °C and 760 °C were observed. The thermal stable piezoelectric activity of d33 = 11.6–13.6 pC/N up to 600 °C suggests that the BTN1BiT2 ceramic is a good candidate for piezoelectric device using in high temperature. This work indicates the universality of such abnormal structures and it will obviously expand Aurivillius family for future applications.
中文翻译:
新型共生铋层状(Bi 3 TiNbO 9)1(Bi 4 Ti 3 O 12)2陶瓷的制备及其电学性能。
我们首先报告异常的共生铋层结构相(Bi 3 TiNbO 9)1(Bi 4 Ti 3 O 12)2或BTN 1 BiT 2,其母体嵌段不相等。HRTEM分析表明这种化合物具有长程-233-序列。晶体结构已经在正交空间群A2 1 am中以a = 5.458Å,b = 5.415Å和c = 91.03Å解析。在668°C和760°C处观察到双介电峰。d 33的热稳定压电活性 在600°C时= 11.6–13.6 pC / N表示BTN 1 BiT 2陶瓷是高温下压电器件的理想选择。这项工作表明这种异常结构的普遍性,显然将扩大Aurivillius系列,以供将来使用。