Solution processes are well suited for large-scale production of thin films of organic active layers in transistors. However, environmentally hazardous chlorine-based solvents are required for conventional solution processes. Here we introduced a new wet-process approach, without the use of toxic solvents, for creating isotropic phases of several naphthalene tetracarboxylic acid diimide derivatives substituted at the N and N′ positions with long alkyl chains of varying lengths (NTCDI-Cn). Thin films of NTCDI-Cn were prepared by this process, the dependence of the device performance on the thickness of the thin films and the length of the NTCDI-Cn alkyl chains was investigated, and the process was optimized. The devices of NTCDI-Cn exhibited a relatively high electron mobility (∼0.1 cm²/V), and a maximum electron mobility of 0.38 cm²/V was obtained from the 50-nm-thick NTCDI-C13 TFT.

溶液工艺非常适合大规模生产晶体管中有机活性层的薄膜。但是，常规溶液工艺需要对环境有害的氯基溶剂。在这里，我们引入了一种新的湿法工艺，无需使用有毒溶剂，即可创建多个萘四甲酸二亚胺衍生物的各向同性相，这些衍生物在N和N'位置被长短不一的长烷基链（NTCDI-C n）取代。通过该工艺制备了NTCDI-C n薄膜，研究了器件性能对薄膜厚度和NTCDI-C n烷基链长度的依赖性，并对该工艺进行了优化。NTCDI-C n的设备具有50nm厚的NTCDI-C13 TFT的电子迁移率较高（〜0.1cm ² / V），最大电子迁移率为0.38cm ² / V。