CVD growth of continuous and spatially uniform single layer graphene across the grain boundary of preferred (111) oriented copper processed by sequential melting–resolidification–recrystallization,Materials Chemistry Frontiers

当前位置： X-MOL 学术 › Mater. Chem. Front. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

CVD growth of continuous and spatially uniform single layer graphene across the grain boundary of preferred (111) oriented copper processed by sequential melting–resolidification–recrystallization
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2018-04-09 00:00:00 , DOI: 10.1039/c8qm00082d
Indu Sharma _{1,

2,

3,

4,

5} , Sanjay R. Dhakate _{1,

2,

3,

4,

5} , Kiran M. Subhedar _{1,

2,

3,

4,

5}

Affiliation

The properties of the catalyst used for CVD growth have a significant influence on the quality of the graphene grown. Single crystallinity or preferred (111) orientation with a smooth surface is the most essential criterion for the growth of high quality graphene on a copper substrate. Herein, the effective strategy of pre-heat treatment of the copper substrate for the growth of improved quality single layer graphene is demonstrated. The sequential melting, resolidification and recrystallization with a controlled slow cooling rate leads to preferred (111) oriented grain growth in the copper substrate, which was confirmed with XRD studies. The grain growth evolution and strain relaxation, correlated with surface smoothening, were inferred from AFM studies. The Raman spectroscopy measurement signifies the improved quality of the CVD grown graphene which is almost free from the multilayer patches that are usually associated with the routine CVD growth process. The Raman mapping carried out directly on the graphene/copper surface reveals spatial continuity and uniformity of graphene quality across the copper grain boundaries over a large area, which signifies the importance of the strain relaxed improved surface morphology with a uniform catalytic and crystallographic environment of the underlying surface. The electrical characterization corroborates the result of improved quality of graphene grown on recrystallized copper. Hence, a feasible process of high quality graphene growth was achieved with a simple but effective strategy of preheat treatment involving melting, resolidification and recrystallization of the copper substrate.

中文翻译：

通过顺序熔融-再凝固-再结晶处理的优选（111）取向铜的晶界上连续且空间均匀的单层石墨烯的CVD生长

用于CVD生长的催化剂的性质对生长的石墨烯的质量具有重大影响。具有结晶表面的单结晶度或首选（111）取向是在铜基板上生长高质量石墨烯的最基本标准。在此，说明了对铜基板进行预热处理以提高质量的单层石墨烯生长的有效策略。XRD研究证实，在受控的缓慢冷却速率下进行的连续熔化，再固化和重结晶会导致铜基板中出现优选的（111）取向晶粒生长。从AFM研究中可以推断出晶粒生长的演变和应变的松弛，以及与表面的平滑度有关。拉曼光谱法测量表明CVD生长的石墨烯的质量得到改善，而石墨烯几乎没有通常与常规CVD生长过程相关的多层膜片。直接在石墨烯/铜表面上进行的拉曼作图揭示了大面积区域内整个铜晶界的石墨烯质量的空间连续性和均匀性，这表明应变缓和改进的表面形态以及均匀的催化和晶体学环境的重要性。底层表面。电学特征证实了在重结晶铜上生长的石墨烯质量提高的结果。因此，通过简单但有效的涉及熔化的预热处理策略，可以实现高质量石墨烯生长的可行过程。

更新日期：2018-04-09

点击分享查看原文

点击收藏

阅读更多本刊最新论文