Abstract In this work, twisted nanostructured silicon-copper (with 19%at. copper) thin film is fabricated by glancing angle deposition phi-sweep process of ion beam assisted electron beam evaporation method. The thin film delivers 977 mAh g −1 after 100 cycles, when cycled with 100 mA g −1 rate and performs 280 mAh g −1 at 2.5 A g −1 rate. The morphological and the compositional particularities of the electrode might govern this noticeable cycle performance: Gaps among the nanostructures accommodate large volume changes and provide easy access to lithium ions for reacting with silicon to deliver high capacity. Plus, the direct connection of nanostructures to the current collector displays short lithium travelling distance promoting lithiation kinetic. Moreover, small intermetallics creating electronic conductive pathways enhance the reversibility. And finally, 5 min ion assisted deposition increases the adhesion of the film while avoiding possible delamination, hence quick failure of the electrode in the early stages of cycling.

中文翻译：

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在离子辅助电子束沉积中通过 phi-sweep 方法制备用于 LIB 的扭曲纳米柱

摘要 本研究采用离子束辅助电子束蒸发法的掠射角沉积phi-sweep工艺制备了扭曲纳米结构的硅铜(含19%at.铜)薄膜。该薄膜在 100 次循环后提供 977 mAh g -1 ，当以 100 mA g -1 倍率循环时，并在 2.5 A g -1 倍率下执行 280 mAh g -1 。电极的形态和组成特性可能决定了这种显着的循环性能：纳米结构之间的间隙适应大的体积变化，并提供容易获得锂离子与硅反应以提供高容量的途径。此外，纳米结构与集电器的直接连接显示出短的锂移动距离促进了锂化动力学。此外，产生电子导电通路的小金属间化合物增强了可逆性。