We have investigated the effect of organic solvents that are used for spin coating 2,7-didodecyl [1]benzothieno [3,2-b][1]benzothiophene (C₁₂-BTBT) on the electrical characteristics of organic field-effect transistors (OFETs) having a top-gate/bottom-contact configuration to develop high-performance OFETs with simplified solution processes. It is found that spin coating C₁₂-BTBT using binary solvent mixtures comprising toluene and high-boiling point solvents such as p-xylene and mesitylene allow the production of large polycrystalline domains having well-ordered edge-on oriented structures. The solution-processed C₁₂-BTBT OFET devices processed using the binary solvent mixtures exhibit high average field-effect mobilities of greater than 7 cm² V⁻¹ s⁻¹, low average threshold voltages (V_th) of less than −1 V, and high maximum mobilities of approximately 10 cm² V⁻¹ s⁻¹. Further, the devices exhibit good operational stabilities, and small V_th shifts of less than 0.5 V are observed after applying a gate bias stress of approximately −1 MV cm⁻¹ for 10⁴ s.

我们研究了用于旋涂2,7-二十二烷基[1]苯并噻吩并[3,2-b] [1]苯并噻吩（C ₁₂ -BTBT）的有机溶剂对有机场效应晶体管电特性的影响（OFET）具有顶栅/底部接触配置，可通过简化的解决方案开发高性能的OFET。已发现使用包含甲苯和高沸点溶剂如对二甲苯和均三甲苯的二元溶剂混合物旋涂C ₁₂ -BTBT允许生产具有规则有序的边上取向结构的大的多晶畴。固溶处理后的C ₁₂使用二元溶剂混合物处理的-BTBT OFET器件显示出大于7 cm ²  V ^-1  s ^-1的高平均场效应迁移率，小于-1 V的低平均阈值电压（V _th）和高的最大迁移率。大约10 cm ²  V ^-1  s ^-1。此外，该装置表现出良好的稳定性运行，以及小V_个小于0.5伏的位移施加大约-1 MV cm的栅极偏置应力后观察到^-1为10 ⁴ 秒。