Graphdiyne is predicted to have a natural band gap and simultaneously possesses superior carrier mobility, which makes it potential for electronic devices. Synthesis of ultrathin graphdiyne film is highly demanded. In this work, we proposed an approach for synthesis of ultrathin graphdiyne film using graphene as a surface template, which can induce confined reaction on substrate. With all-carbon, conjugated, atomically flat structure, graphene has a strong interaction with the graphdiyne system, resulting the formation of continuous flat ultrathin graphdiyne film with thickness less than 3 nm. Raman spectra, grazing incidence X-ray diffraction, and transmission electron microscopy characterization all confirmed the features of graphdiyne. Furthermore, this strategy was also extended to the hexagonal boron nitride (hBN) surface with resembling structure, serving as a perfect dielectric layer. Field-effect transistor devices based on graphdiyne film grown on hBN were fabricated directly, and electrical transport measurements demonstrate the good conductivity with p-type characteristics of the as-obtained graphdiyne film.

中文翻译：

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表面模板合成超薄石墨二炔薄膜

预计Graphdiyne具有自然的带隙，同时具有出色的载流子迁移率，这使其在电子设备中具有潜力。对超薄石墨二炔薄膜的合成有很高的要求。在这项工作中，我们提出了一种以石墨烯为表面模板合成超薄石墨二炔薄膜的方法，该方法可以在基板上引发受限的反应。石墨烯具有全碳，共轭，原子平坦的结构，与石墨二炔系统具有很强的相互作用，从而形成了厚度小于3 nm的连续的平坦的超薄石墨二炔薄膜。拉曼光谱，掠入射X射线衍射和透射电子显微镜表征均证实了石墨二炔的特征。此外，该策略还扩展到具有相似结构的六方氮化硼（hBN）表面，可作为理想的介电层。直接制造了基于在hBN上生长的石墨二炔薄膜的场效应晶体管器件，电传输测量结果表明该器件具有良好的导电性。所获得的石墨二炔膜的p型特性。