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Enhanced photoelectric performance of CdS/CdSe co-sensitized TiO2 nanosheets array films†
Sustainable Energy & Fuels ( IF 5.0 ) Pub Date : 2018-04-05 00:00:00 , DOI: 10.1039/c8se00084k Tie Liu 1, 2, 3, 4 , Jun Wang 1, 2, 3, 4 , Li Liu 1, 2, 3, 4 , Shuang Feng 1, 2, 3, 4 , Pengyu Su 1, 2, 3, 4 , Haibin Yang 1, 2, 3, 4 , Wuyou Fu 1, 2, 3, 4
Sustainable Energy & Fuels ( IF 5.0 ) Pub Date : 2018-04-05 00:00:00 , DOI: 10.1039/c8se00084k Tie Liu 1, 2, 3, 4 , Jun Wang 1, 2, 3, 4 , Li Liu 1, 2, 3, 4 , Shuang Feng 1, 2, 3, 4 , Pengyu Su 1, 2, 3, 4 , Haibin Yang 1, 2, 3, 4 , Wuyou Fu 1, 2, 3, 4
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In this study, vertically aligned titanium dioxide nanosheets (TiO2NSs) array films were employed for the fabrication of photoanodes for quantum-dot sensitized solar cells (QDSSCs). The TiO2NSs array films were synthesized by a hydrothermal method. Then, cadmium sulfide (CdS) and cadmium selenide (CdSe) were assembled onto the TiO2NSs array films through chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR), respectively. Detailed characterization measurements were carried out to analyse the crystallinity, microstructure, composition and optical properties of the samples. The CdS and CdSe QDs were densely and uniformly deposited on both {001} and {101} facets of the TiO2NSs array films. Moreover, the effect of CdS deposition time and number of CdSe deposition cycles (C) on the photoelectric performance was also investigated in detail. The best performance of 4.77% was achieved under AM 1.5 G illumination with Jsc = 18.22 mA cm−2, Voc = 0.51 V, and FF = 0.52 when the deposition time of CdS was 30 min and the deposition cycle of CdSe was 10C. The enhanced photoelectric performance mechanism of the co-sensitized device is also discussed in this paper.
中文翻译：
CdS / CdSe共敏TiO 2纳米片阵列膜的光电性能增强†
在这项研究中，垂直排列的二氧化钛纳米片（TiO 2 NSs）阵列膜被用于制造量子点敏化太阳能电池（QDSSCs）的光阳极。采用水热法合成了TiO 2 NSs阵列膜。然后，分别通过化学浴沉积（CBD）和连续的离子层吸附和反应（SILAR）将硫化镉（CdS）和硒化镉（CdSe）组装到TiO 2 NSs阵列膜上。进行了详细的表征测量，以分析样品的结晶度，微观结构，组成和光学性质。CdS和CdSe QD密集且均匀地沉积在TiO 2的{001}和{101}面上NSs阵列胶片。此外，还详细研究了CdS沉积时间和CdSe沉积周期数（C）对光电性能的影响。当CdS的沉积时间为30分钟且CdSe的沉积周期为10C时，在AM 1.5 G照明下，J sc = 18.22 mA cm -2，V oc = 0.51 V和FF = 0.52时，最佳性能达到4.77％。。本文还讨论了共敏化器件增强的光电性能机理。
更新日期：2018-04-05
中文翻译：
CdS / CdSe共敏TiO 2纳米片阵列膜的光电性能增强†
在这项研究中，垂直排列的二氧化钛纳米片（TiO 2 NSs）阵列膜被用于制造量子点敏化太阳能电池（QDSSCs）的光阳极。采用水热法合成了TiO 2 NSs阵列膜。然后，分别通过化学浴沉积（CBD）和连续的离子层吸附和反应（SILAR）将硫化镉（CdS）和硒化镉（CdSe）组装到TiO 2 NSs阵列膜上。进行了详细的表征测量，以分析样品的结晶度，微观结构，组成和光学性质。CdS和CdSe QD密集且均匀地沉积在TiO 2的{001}和{101}面上NSs阵列胶片。此外，还详细研究了CdS沉积时间和CdSe沉积周期数（C）对光电性能的影响。当CdS的沉积时间为30分钟且CdSe的沉积周期为10C时，在AM 1.5 G照明下，J sc = 18.22 mA cm -2，V oc = 0.51 V和FF = 0.52时，最佳性能达到4.77％。。本文还讨论了共敏化器件增强的光电性能机理。
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