An ultrathin SiO2 blocking layer to suppress interfacial recombination for efficient Sb2S3-sensitized solar cells†,Inorganic Chemistry Frontiers

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An ultrathin SiO2 blocking layer to suppress interfacial recombination for efficient Sb2S3-sensitized solar cells†
Inorganic Chemistry Frontiers ( IF 6.1 ) Pub Date : 2018-04-04 00:00:00 , DOI: 10.1039/c8qi00076j
Yafeng Xu _{1,

2,

3,

4,

5} , Wenyong Chen _{1,

2,

3,

4,

5} , Xihong Ding _{6,

7,

8,

9} , Xu Pan _{1,

2,

3,

4,

5} , Linhua Hu _{1,

2,

3,

4,

5} , Shangfeng Yang _{4,

10,

11,

12,

13} , Jun Zhu _{1,

2,

3,

4,

5} , Songyuan Dai _{6,

7,

8,

9}

Affiliation

Interfacial charge recombination is a serious problem in semiconductor-sensitized solar cells which severely limits the power conversion efficiency. Herein, an ultrathin SiO₂ blocking layer was introduced to the TiO₂ surface to suppress the interfacial recombination in Sb₂S₃-sensitized solar cells. The SiO₂ blocking layer was deposited by a simple chemical bath method. Due to the unique features of the SiO₂ layer, the Sb₂S₃ sensitizer shows a remarkable change in the morphology after SiO₂ coating, forming numerous irregular large crystals which did not bring a negative impact. Electrochemical impedance spectra and open-circuit voltage-decay analysis confirm that the SiO₂ layer efficiently suppresses the interfacial recombination at the TiO₂/Sb₂S₃ interface which is the major recombination path in the solar cells. As a result, the device exhibits remarkably enhanced open-circuit voltage, fill factor and power conversion efficiency.

中文翻译：

抑制界面重组的超薄SiO ₂阻挡层，可实现高效的Sb ₂ S ₃敏化太阳能电池†

界面电荷复合是半导体敏化太阳能电池中的严重问题，其严重限制了功率转换效率。在此，将超薄的SiO ₂阻挡层引入到TiO ₂表面以抑制Sb ₂ S ₃敏化太阳能电池中的界面复合。通过简单的化学浴法沉积SiO ₂阻挡层。由于SiO ₂层的独特特征，Sb ₂ S ₃敏化剂在SiO ₂后显示出显着的形态变化。涂层，形成许多不规则的大晶体，不会带来负面影响。电化学阻抗谱和开路电压衰减分析证实，SiO ₂层有效地抑制了TiO ₂ / Sb ₂ S ₃界面处的界面复合，而TiO ₂ / Sb ₂ S ₃界面是太阳能电池中的主要复合路径。结果，该器件表现出显着提高的开路电压，填充系数和功率转换效率。

更新日期：2018-04-04

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