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High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts
Nano Letters ( IF 9.6 ) Pub Date : 2018-04-03 00:00:00 , DOI: 10.1021/acs.nanolett.7b04205 Tianjiao Wang 1 , Kraig Andrews 2 , Arthur Bowman 2 , Tu Hong 1 , Michael Koehler 3 , Jiaqiang Yan 3, 4 , David Mandrus 3, 4 , Zhixian Zhou 2 , Ya-Qiong Xu 1, 5
Nano Letters ( IF 9.6 ) Pub Date : 2018-04-03 00:00:00 , DOI: 10.1021/acs.nanolett.7b04205 Tianjiao Wang 1 , Kraig Andrews 2 , Arthur Bowman 2 , Tu Hong 1 , Michael Koehler 3 , Jiaqiang Yan 3, 4 , David Mandrus 3, 4 , Zhixian Zhou 2 , Ya-Qiong Xu 1, 5
Affiliation
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We report high-performance WSe2 phototransistors with two-dimensional (2D) contacts formed between degenerately p-doped WSe2 and undoped WSe2 channel. A photoresponsivity of ∼600 mA/W with a high external quantum efficiency up to 100% and a fast response time (both rise and decay times) shorter than 8 μs have been achieved concurrently. More importantly, our WSe2 phototransistor exhibits a high specific detectivity (∼1013 Jones) in vacuum, comparable or higher than commercial Si- and InGaAs-based photodetectors. Further studies have shown that the high photoresponsivity and short response time of our WSe2 phototransistor are mainly attributed to the lack of Schottky-barriers between degenerately p-doped WSe2 source/drain contacts and undoped WSe2 channel, which can reduce the RC time constant and carrier transit time of a photodetector. Our experimental results provide an accessible strategy to achieve high-performance WSe2 phototransistor architectures by improving their electrical transport and photocurrent generation simultaneously, opening up new avenues for engineering future 2D optoelectronic devices.
中文翻译：
带有2D / 2D欧姆接触的高性能WSe 2光电晶体管
我们报告了高性能的WSe 2光电晶体管，在退化的p掺杂的WSe 2和未掺杂的WSe 2通道之间形成了二维（2D）接触。同时实现了约600 mA / W的光响应性，高达100％的高外部量子效率和小于8μs的快速响应时间（上升和衰减时间）。更重要的是，我们的WSe 2光电晶体管在真空中具有很高的比检测率（约10 13 Jones），与市售的基于Si和InGaAs的光电检测器相当或更高。进一步的研究表明，我们的WSe 2具有较高的光响应性和较短的响应时间光电晶体管的主要原因是退化p掺杂的WSe 2源/漏触点与未掺杂的WSe 2通道之间缺乏肖特基势垒，这可以减少光电探测器的RC时间常数和载流子传输时间。我们的实验结果为通过同时改善其电传输和光电流产生，实现工程化未来2D光电器件的新途径提供了一种可实现的策略，以实现高性能WSe 2光电晶体管架构。
更新日期：2018-04-03
中文翻译：
带有2D / 2D欧姆接触的高性能WSe 2光电晶体管
我们报告了高性能的WSe 2光电晶体管，在退化的p掺杂的WSe 2和未掺杂的WSe 2通道之间形成了二维（2D）接触。同时实现了约600 mA / W的光响应性，高达100％的高外部量子效率和小于8μs的快速响应时间（上升和衰减时间）。更重要的是，我们的WSe 2光电晶体管在真空中具有很高的比检测率（约10 13 Jones），与市售的基于Si和InGaAs的光电检测器相当或更高。进一步的研究表明，我们的WSe 2具有较高的光响应性和较短的响应时间光电晶体管的主要原因是退化p掺杂的WSe 2源/漏触点与未掺杂的WSe 2通道之间缺乏肖特基势垒，这可以减少光电探测器的RC时间常数和载流子传输时间。我们的实验结果为通过同时改善其电传输和光电流产生，实现工程化未来2D光电器件的新途径提供了一种可实现的策略，以实现高性能WSe 2光电晶体管架构。
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