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Free‐Standing Bialkali Photocathodes Using Atomically Thin Substrates
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-04-03 , DOI: 10.1002/admi.201800249 Hisato Yamaguchi 1 , Fangze Liu 1 , Jeffrey DeFazio 2 , Mengjia Gaowei 3 , Claudia W. Narvaez Villarrubia 1 , Junqi Xie 4 , John Sinsheimer 3 , Derek Strom 5 , Vitaly Pavlenko 6 , Kevin L. Jensen 7 , John Smedley 3 , Aditya D. Mohite 1 , Nathan A. Moody 6
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-04-03 , DOI: 10.1002/admi.201800249 Hisato Yamaguchi 1 , Fangze Liu 1 , Jeffrey DeFazio 2 , Mengjia Gaowei 3 , Claudia W. Narvaez Villarrubia 1 , Junqi Xie 4 , John Sinsheimer 3 , Derek Strom 5 , Vitaly Pavlenko 6 , Kevin L. Jensen 7 , John Smedley 3 , Aditya D. Mohite 1 , Nathan A. Moody 6
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This study reports successful deposition of high quantum efficiency (QE) bialkali antimonide K2CsSb photocathodes on graphene films. The results pave the way for an ultimate goal of encapsulating technologically relevant photocathodes for accelerator technology with an atomically thin protecting layer to enhance lifetime while minimizing QE losses. A QE of 17% at ≈3.1 eV (405 nm) is the highest value reported so far on graphene substrates and is comparable to that obtained on stainless steel and nickel reference substrates. The spectral responses of the photocathodes on graphene exhibit signature features of K2CsSb including the characteristic absorption at ≈2.5 eV. Materials characterization based on X‐ray fluorescence and X‐ray diffraction reveals that the composition and crystal quality of these photocathodes deposited on graphene is comparable to those deposited on a reference substrate. Quantitative agreement between optical calculations and QE measurements for the K2CsSb on free suspended graphene and a graphene‐coated metal substrate further confirms the high‐quality interface between the photocathodes and graphene. Finally, a correlation between the QE and graphene quality as characterized by Raman spectroscopy suggests that a lower density of atomistic defects in the graphene films leads to higher QE of the deposited K2CsSb photocathodes.
中文翻译：
使用原子薄基片的自由式Bialkali光电阴极
这项研究报告了在石墨烯薄膜上成功沉积了高量子效率（QE）的双碱金属锑化钾K 2 CsSb光电阴极。这些结果为最终目的铺平了道路，该最终目标是用原子上薄的保护层封装加速器技术中与技术相关的光电阴极，以延长使用寿命并最大程度地减少QE损失。迄今为止，在石墨烯基板上报道的≈3.1eV（405 nm）处的QE为17％，是最高值，与在不锈钢和镍基准基板上获得的QE相当。石墨烯上的光电阴极的光谱响应表现出K 2的特征CsSb包括在约2.5 eV处的特征吸收。基于X射线荧光和X射线衍射的材料表征表明，沉积在石墨烯上的这些光电阴极的成分和晶体质量与参考基板上沉积的光电阴极相当。在自由悬浮的石墨烯和涂有石墨烯的金属基材上对K 2 CsSb进行光学计算和QE测量之间的定量一致性进一步证实了光电阴极和石墨烯之间的高质量界面。最后，通过拉曼光谱表征的QE与石墨烯质量之间的相关性表明，石墨烯薄膜中较低的原子缺陷密度导致沉积的K 2 CsSb光电阴极的QE较高。
更新日期：2018-04-03
中文翻译：
使用原子薄基片的自由式Bialkali光电阴极
这项研究报告了在石墨烯薄膜上成功沉积了高量子效率（QE）的双碱金属锑化钾K 2 CsSb光电阴极。这些结果为最终目的铺平了道路，该最终目标是用原子上薄的保护层封装加速器技术中与技术相关的光电阴极，以延长使用寿命并最大程度地减少QE损失。迄今为止，在石墨烯基板上报道的≈3.1eV（405 nm）处的QE为17％，是最高值，与在不锈钢和镍基准基板上获得的QE相当。石墨烯上的光电阴极的光谱响应表现出K 2的特征CsSb包括在约2.5 eV处的特征吸收。基于X射线荧光和X射线衍射的材料表征表明，沉积在石墨烯上的这些光电阴极的成分和晶体质量与参考基板上沉积的光电阴极相当。在自由悬浮的石墨烯和涂有石墨烯的金属基材上对K 2 CsSb进行光学计算和QE测量之间的定量一致性进一步证实了光电阴极和石墨烯之间的高质量界面。最后，通过拉曼光谱表征的QE与石墨烯质量之间的相关性表明，石墨烯薄膜中较低的原子缺陷密度导致沉积的K 2 CsSb光电阴极的QE较高。
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