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Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-03-30 00:00:00 , DOI: 10.1021/acs.chemmater.7b04666
David M. Stewart 1 , Alexander J. Pearse 2 , Nam S. Kim 3 , Elliot J. Fuller 4 , A. Alec Talin 4 , Keith Gregorczyk 2 , Sang Bok Lee 3 , Gary W. Rubloff 1, 2, 5
Affiliation  

Major advances in thin-film solid-state batteries (TFSSBs) may capitalize on 3D structuring using high-aspect-ratio substrates such as nanoscale pits, pores, trenches, flexible polymers, and textiles. This will require conformal processes such as atomic layer deposition (ALD) for every active functional component of the battery. Here we explore the deposition and electrochemical properties of SnO2, SnNy, and SnOxNy thin films as TFSSB anode materials, grown by ALD using tetrakisdimethylamido(tin), H2O, and N2 plasma as precursors. By controlling the dose ratio between H2O and N2, the N–O fraction can be tuned between 0% N and 95% N. The electrochemical properties of these materials were tested across a composition range varying from pure SnO2, to SnON intermediates, and pure SnNy. In TFSSBs, the SnNy anodes are found to be more stable during cycling than the SnO2 or SnOxNy films, with an initial reversible capacity beyond that of Li–Sn alloying, retaining 75% of their capacity over 200 cycles compared to only 50% for SnO2. Furthermore, the performance of the SnOxNy anodes indicates that SnNy anodes should not be negatively impacted by small levels of O contamination.

中文翻译:

固态电池原子层沉积氧氮化锡阳极

薄膜固态电池(TFSSB)的重大进步可能会利用具有高纵横比的基材(例如纳米级凹坑,孔,沟槽,柔性聚合物和纺织品)进行3D结构化。对于电池的每个有源功能组件,这将需要采用保形工艺,例如原子层沉积(ALD)。在这里,我们探索了以四基二甲基氨基(锡),H 2 O和N 2等离子体为前驱物通过ALD通过ALD生长的作为TFSSB阳极材料的SnO 2,SnN y和SnO x N y薄膜的沉积和电化学性能。通过控制H 2 O和N 2之间的剂量比,N–O的比例可以在0%N和95%N之间进行调节。在从纯SnO 2到SnON中间体以及纯SnN y的不同组成范围内测试了这些材料的电化学性能。在TFSSB中,发现SnN y阳极在循环过程中比SnO 2或SnO x N y膜更稳定,其初始可逆容量超出了Li-Sn合金的容量,与200次循环相比,它们保留了其容量的75%。 SnO 2仅为50%。此外,SnO x N y阳极的性能表明,SnN y 阳极不应受到少量O污染的负面影响。
更新日期:2018-03-30
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