Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.

中文翻译：

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基于纳米线的量子点中的各向异性应变诱导带隙工程

通过应变来调整体结构和量子结构中的发光是构成半导体功能特性的一种补充方法。在这里，我们演示了通过施加穿过氧化物包络层的应变来调节高达115 meV的GaAs纳米线及其量子点的发光。我们证明该应变是高度各向异性的，并且显然导致沿NW纵轴的一个分量，与单轴应力方程式显示出良好的一致性。我们进一步证明了应变在很大程度上取决于氧化物的厚度，氧化物的固有应变和氧化物的微观结构。我们还表明，合奏测量与单西北水平的特征完全一致，进一步阐明了发现的一般特征。