This study investigated the nonvolatile memory characteristics of devices fabricated with PMMA embedding composite of graphene and molybdenum disulphide, which were employed as charge-trapping centres. X-ray diffraction measurements, Scanning and transmission electron microscope image analysis along with other characterisation techniques were performed for the assessment of the nature of graphene MoS₂ hybrid system. Bistable I-V characteristics of the device revealed stable and rewritable memory effect. A significantly high resistance ratio > 10⁴ (R_off/R_on) was observed even after 10 days. The reliability and reproducibility of the devices were tested for 10⁴ cycles. The conduction mechanisms of the fabricated nanocomposite based memory cell were discussed on the basis of experimental data using a charge trapping–detrapping mechanism in the graphene MoS₂ hybrid. Owing to the increasing interest in the flexible electronics, bending tests were carried out on the devices fabricated on PET substrates. Bendability test at various bending diameters (40-5 mm) for 100 cycles was carried out to show the mechanical robustness of the device.

这项研究调查了由PMMA嵌入的石墨烯和二硫化钼复合材料制成的器件的非易失性存储特性，这些器件被用作电荷俘获中心。进行了X射线衍射测量，扫描和透射电子显微镜图像分析以及其他表征技术，以评估石墨烯MoS ₂杂化系统的性质。该器件的双稳态IV特性显示出稳定且可重写的记忆效应。即使在10天后，也观察到了很高的电阻比> 10 ⁴（R _off / R _on）。测试了设备的可靠性和可重复性10 ⁴周期。在石墨烯MoS ₂杂化体中使用电荷俘获-去俘获机制，基于实验数据讨论了所制备的纳米复合材料基存储单元的导电机制。由于对柔性电子器件的兴趣日益浓厚，因此对在PET基板上制造的设备进行了弯曲测试。在各种弯曲直径（40-5 mm）下进行了100次弯曲测试，以显示设备的机械强度。