Channel-selective filtering and amplification in ultrahigh frequency (UHF) receiver front-ends are crucial for realization of cognitive radio systems and the future of wireless communication. In the past decade, there have been significant advances in the performance of microscale electromechanical resonant devices. However, such devices have not yet been able to meet the requirements for direct channel selection at RF. They also occupy a relatively large area on the chip making implementation of large arrays to cover several frequency bands challenging. On the other hand, electromechanical piezoresistive resonant devices are active devices that have recently shown the possibility of simultaneous signal amplification and channel-select filtering at lower frequencies. It has been theoretically predicted that if scaled down into the nanoscale, they can operate in the UHF range with a very low power consumption. Here, for the first time nanomechanical piezoresistive amplifiers with active element dimensions as small as 50 nm × 200 nm are demonstrated. With a device area of less than 1.5 μm² a piezoresistive amplifier operating at 730 MHz shows effective quality factor (Q) of 89,000 for a 50Ω load and gains as high as 10 dB and Q of 330,000 for a 250Ω load while consuming 189 μW of power. On the basis of the measurement results, it is shown that for piezoresistor dimensions of 30 nm × 100 nm it is possible to get a similar performance at 2.4 GHz with device footprint of less than 0.2 μm².

中文翻译：

---

用于直接通道选择性接收器前端的超高频纳米机械压阻放大器

超高频（UHF）接收器前端中的通道选择性滤波和放大对于实现认知无线电系统和无线通信的未来至关重要。在过去的十年中，微型机电谐振装置的性能有了显着的进步。但是，此类设备尚未能够满足RF直接通道选择的要求。它们还在芯片上占据相对较大的面积，从而使得大型阵列的实现难以覆盖几个频带。另一方面，机电压阻谐振装置是有源装置，最近已经显示了在较低频率下同时进行信号放大和通道选择滤波的可能性。从理论上讲，如果缩小到纳米级，它们可以在UHF范围内以非常低的功耗工作。在此，首次展示了有源元件尺寸小至50 nm×200 nm的纳米机械压阻放大器。器件面积小于1.5μm^如图2所示，工作在730 MHz的压阻放大器在50Ω负载下的有效品质因数（Q）为89,000 ，在250Ω负载下的增益高达10 dB，Q值为330,000，同时消耗189μW的功率。对测量结果的基础上，它表明，对于30纳米×100nm的压电电阻器的尺寸，可以在2.4GHz具有小于0.2μm的装置占据空间以获得相似的性能²。