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Interface Engineering in Quantum-Dot-Sensitized Solar Cells
Langmuir ( IF 3.7 ) Pub Date : 2018-03-27 00:00:00 , DOI: 10.1021/acs.langmuir.8b00293
Ganga Halder 1 , Dibyendu Ghosh 1 , Md. Yusuf Ali 1 , Atharva Sahasrabudhe 1 , Sayan Bhattacharyya 1
Affiliation  

The unique properties of II–VI semiconductor nanocrystals such as superior light absorption, size-dependent optoelectronic properties, solution processability, and interesting photophysics prompted quantum-dot-sensitized solar cells (QDSSCs) as promising candidates for next-generation photovoltaic (PV) technology. QDSSCs have advantages such as low-cost device fabrication, multiple exciton generation, and the possibility to push over the theoretical power conversion efficiency (PCE) limit of 32%. In spite of dedicated research efforts to enhance the PCE, optimize individual solar cell components, and better understand the underlying science, QDSSCs have unfortunately not lived up to their potential due to shortcomings in the fabrication process and with the QDs themselves. In this feature article, we briefly discuss the QDSSC concepts and mechanisms of the charge carrier recombination pathways that occur at multiple interfaces, viz., (i) metal oxide (MO)/QDs, (ii) MO/QDs/electrolyte, and (iii) counter electrode (CE)/electrolyte. The rational strategies that have been developed to minimize/block these charge recombination pathways are elaborated. The article concludes with a discussion of the present challenges in fabricating efficient devices and future prospects for QDSSCs.

中文翻译:

量子点敏化太阳能电池的界面工程

II–VI半导体纳米晶体的独特特性,例如出色的光吸收,与尺寸有关的光电特性,溶液可加工性和有趣的光物理特性,促使量子点敏化太阳能电池(QDSSC)成为下一代光伏(PV)技术的有希望的候选者。QDSSC具有诸如低成本的器件制造,多激子产生,以及超过32%的理论功率转换效率(PCE)极限的可能性等优点。尽管为增强PCE,优化单个太阳能电池组件以及更好地了解基础科学而进行了专门的研究工作,但不幸的是,由于制造工艺和QD自身的缺陷,QDSSC未能发挥其潜力。在这篇专题文章中,我们简要讨论了在多个界面上发生的电荷载流子复合途径的QDSSC概念和机理,即(i)金属氧化物(MO)/ QDs,(ii)MO / QDs /电解质和(iii)对电极( CE)/电解质。阐述了已开发出的最小化/阻止这些电荷重组途径的合理策略。本文最后讨论了制造高效器件的当前挑战以及QDSSC的未来前景。
更新日期:2018-03-27
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