Expandability of organic electronics has stimulated ongoing research for the development of a variety of flexible and/or large-area optoelectronic applications. Among these electronic devices, organic non-volatile memories are emerging as suitable components for solid-state data storage because of their low-cost fabrication, large storage capacity, light weight, and conformable mechanical properties. To fully integrate organic memories with wearable and flexible/stretchable electronic systems, it is important to develop a device in which the properties such as threshold voltage and operating regime are controllable. This leads to improvement in the adaptability of the device to peripheral circuitry and encourages the development of multi-functional organic electronic components. Here, we investigate the tunable electrical properties of charge-trap (electret) memory devices based on organic field-effect transistors, obtained by the doping of an ambipolar polymer semiconductor. The electret memory devices using the doped semiconductor showed a remarkable enhancement in the charge-storage capacity, an excellent charge retention time of more than 10⁷ s, and four-fold increase in charge carrier mobility. The improved memory characteristics associated with the controllable molecular doping could pave the way for the development of next-generation memory devices that are compatible with flexible and printed electronic technology.

有机电子的可扩展性已经激发了正在进行的各种柔性和/或大面积光电应用开发的研究。在这些电子设备中，有机非易失性存储器由于其低成本的制造，大的存储容量，重量轻和合适的机械性能而成为固态数据存储的合适组件。为了将有机存储器与可穿戴和灵活/可伸展的电子系统完全集成在一起，重要的是要开发一种器件，在该器件中，诸如阈值电压和工作状态之类的属性是可控制的。这导致设备对外围电路的适应性的改善，并促进了多功能有机电子元件的发展。这里，我们研究了基于有机场效应晶体管的电荷陷阱（驻极体）存储器件的可调电性能，该器件是通过对双极性聚合物半导体进行掺杂而获得的。使用掺杂半导体的驻极体存储器件显示出显着的电荷存储能力增强，出色的电荷保持时间超过10倍⁷  s后，电荷载流子迁移率增加了四倍。与可控分子掺杂相关的改善的存储特性可以为与柔性和印刷电子技术兼容的下一代存储设备的开发铺平道路。