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Antisolvent-assisted controllable growth of fullerene single crystal microwires for organic field effect transistors and photodetectors†
Nanoscale ( IF 5.8 ) Pub Date : 2018-03-27 00:00:00 , DOI: 10.1039/c8nr01305e Xiaoming Zhao 1, 2, 3, 4 , Tianjun Liu 1, 2, 3, 4 , Yuzhou Cui 1, 2, 3, 4 , Xueyan Hou 1, 2, 3, 4 , Zilu Liu 2, 3, 4, 5 , Xingyi Dai 6, 7, 8, 9, 10 , Jie Kong 6, 7, 8, 9, 10 , Wenda Shi 1, 2, 3, 4 , T. John S. Dennis 1, 2, 3, 4
Nanoscale ( IF 5.8 ) Pub Date : 2018-03-27 00:00:00 , DOI: 10.1039/c8nr01305e Xiaoming Zhao 1, 2, 3, 4 , Tianjun Liu 1, 2, 3, 4 , Yuzhou Cui 1, 2, 3, 4 , Xueyan Hou 1, 2, 3, 4 , Zilu Liu 2, 3, 4, 5 , Xingyi Dai 6, 7, 8, 9, 10 , Jie Kong 6, 7, 8, 9, 10 , Wenda Shi 1, 2, 3, 4 , T. John S. Dennis 1, 2, 3, 4
Affiliation
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There are only a few reported methods by which the size and morphology of organic single crystals for high-performance organic field-effect transistors (OFETs) or other devices can be controlled. Here, a facile solution-processed antisolvent vapor diffusion method was employed to grow millimeter-length C60 single crystal microwires directly in solution. The size of the microwires can be controllably varied via the C60 concentration and/or the choice of antisolvent. OFETs fabricated from the as-produced microwires exhibit mobilities as high as 2.30 cm2 V−1 s−1. A clear relationship between the crystal preparation conditions and device performance is revealed whereby it is observed that the lower the evaporation rate of antisolvent and/or the higher the C60 concentration, the higher the device performance. Photodetectors based on our microwires give a responsivity that is an order of magnitude higher than those grown by drop-casting methods. This study provides a facile method for the crystal engineering of size-tunable millimeter-length C60 single crystals, and revealed the important influences of the antisolvent on the C60 crystal size and the performance of devices based on them. We believe that our processing approach can be further exploited for a broad range of other organic semiconductors to achieve desirable single crystal size and morphology and thus obtain desirable OFETs and photodetector performance.
中文翻译：
用于有机场效应晶体管和光电探测器的富勒烯单晶微线的反溶剂辅助可控生长†
仅有少数报道的方法可以控制用于高性能有机场效应晶体管（OFET）或其他设备的有机单晶的尺寸和形态。在这里，采用一种简便的溶液处理反溶剂蒸汽扩散方法，直接在溶液中生长毫米长的C 60单晶微线。可以通过C 60浓度和/或选择反溶剂来控制微丝的尺寸。由所生产的微丝制成的OFET显示出高达2.30 cm 2 V -1 s -1的迁移率。揭示了晶体制备条件与装置性能之间的明确关系，由此观察到，反溶剂的蒸发速率越低和/或C 60浓度越高，装置性能就越高。基于我们的微线的光电探测器的响应度比采用压铸法生长的光电探测器高出一个数量级。这项研究为大小可调的毫米长C 60单晶的晶体工程提供了一种简便的方法，并揭示了抗溶剂对C 60的重要影响。晶体尺寸和基于它们的器件性能。我们认为，我们的加工方法可以进一步用于其他种类的有机半导体，以达到理想的单晶尺寸和形态，从而获得理想的OFET和光电探测器性能。
更新日期：2018-03-27
中文翻译：
用于有机场效应晶体管和光电探测器的富勒烯单晶微线的反溶剂辅助可控生长†
仅有少数报道的方法可以控制用于高性能有机场效应晶体管（OFET）或其他设备的有机单晶的尺寸和形态。在这里，采用一种简便的溶液处理反溶剂蒸汽扩散方法，直接在溶液中生长毫米长的C 60单晶微线。可以通过C 60浓度和/或选择反溶剂来控制微丝的尺寸。由所生产的微丝制成的OFET显示出高达2.30 cm 2 V -1 s -1的迁移率。揭示了晶体制备条件与装置性能之间的明确关系，由此观察到，反溶剂的蒸发速率越低和/或C 60浓度越高，装置性能就越高。基于我们的微线的光电探测器的响应度比采用压铸法生长的光电探测器高出一个数量级。这项研究为大小可调的毫米长C 60单晶的晶体工程提供了一种简便的方法，并揭示了抗溶剂对C 60的重要影响。晶体尺寸和基于它们的器件性能。我们认为，我们的加工方法可以进一步用于其他种类的有机半导体，以达到理想的单晶尺寸和形态，从而获得理想的OFET和光电探测器性能。
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