Defect engineering in 2D phosphorene samples is becoming an important and powerful technique to alter their properties, enabling new optoelectronic applications, particularly at the infrared wavelength region. Defect engineering in a few‐layer phosphorene sample via introduction of substrate trapping centers is realized. In a three‐layer (3L) phosphorene sample, a strong photoluminescence (PL) emission peak from localized excitons at ≈1430 nm is observed, a much lower energy level than free excitonic emissions. An activation energy of ≈77 meV for the localized excitons is determined in temperature‐dependent PL measurements. The relatively high activation energy supports the strong stability of the localized excitons even at elevated temperature. The quantum efficiency of localized exciton emission in 3L phosphorene is measured to be approximately three times higher than that of free excitons. These results could enable exciting applications in infrared optoelectronics.

中文翻译：

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几层磷的缺陷工程

二维磷光体样品中的缺陷工程正成为改变其性能的一项重要且强大的技术，可实现新的光电应用，尤其是在红外波长区域。通过引入底物捕获中心，实现了对几层磷样品的缺陷工程设计。在三层（3L）磷光体样品中，观察到了约1430 nm处来自局部激子的强光致发光（PL）发射峰，其能量水平远低于自由激子​​发射。在依赖温度的PL测量中确定了局部激子的≈77meV的活化能。相对较高的活化能即使在高温下也支持局部激子的强稳定性。经测量，在3L磷中的局部激子发射的量子效率大约是自由激子的量子效率的三倍。这些结果可能会在红外光电子学中激发令人兴奋的应用。