Topotactic anion-exchange in thermoelectric nanostructured layered tin chalcogenides with reduced selenium content†,Chemical Science

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Topotactic anion-exchange in thermoelectric nanostructured layered tin chalcogenides with reduced selenium content†
Chemical Science ( IF 7.6 ) Pub Date : 2018-03-23 00:00:00 , DOI: 10.1039/c7sc05190e
Guang Han ₁ , Srinivas R Popuri ₂ , Heather F Greer ₃ , Ruizhi Zhang ₄ , Lourdes Ferre-Llin ₅ , Jan-Willem G Bos ₂ , Wuzong Zhou ₃ , Michael J Reece ₄ , Douglas J Paul ₅ , Andrew R Knox ₅ , Duncan H Gregory ₁

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Anion exchange has been performed with nanoplates of tin sulfide (SnS) via “soft chemical” organic-free solution syntheses to yield layered pseudo-ternary tin chalcogenides on a 10 g-scale. SnS undergoes a topotactic transformation to form a series of S-substituted tin selenide (SnSe) nano/micro-plates with tuneable chalcogenide composition. SnS_0.1Se_0.9 nanoplates were spark plasma sintered into phase-pure, textured, dense pellets, the ZT of which has been significantly enhanced to ≈1.16 from ≈0.74 at 923 K via microstructure texturing control. These approaches provide versatile, scalable and low-cost routes to p-type layered tin chalcogenides with controllable composition and competitive thermoelectric performance.

中文翻译：

硒含量降低的热电纳米结构层状锡硫属化物中的拓扑阴离子交换†

通过“软化学”无有机物溶液合成，用硫化锡 (SnS) 纳米板进行阴离子交换，产生 10 g 规模的层状伪三元锡硫属化物。 SnS 经过拓扑转变，形成一系列具有可调硫族化物成分的 S 取代的硒化锡 (SnSe) 纳米/微米板。 SnS _0.1 Se _0.9纳米板采用放电等离子烧结成相纯、有织构、致密的颗粒，通过微观结构织构控制，其ZT在 923 K 时从 ≈0.74 显着提高到 ≈1.16。这些方法为具有可控成分和具有竞争力的热电性能的p型层状锡硫属化物提供了通用、可扩展和低成本的途径。

更新日期：2018-03-23

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