Correction: Electronic and transport properties of Li-doped NiO epitaxial thin films,Journal of Materials Chemistry C

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Correction: Electronic and transport properties of Li-doped NiO epitaxial thin films
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2018-03-22 00:00:00 , DOI: 10.1039/c8tc90056f
J. Y. Zhang _{1,

2,

3,

4,

5} , W. W. Li _{6,

7,

8,

9} , R. L. Z. Hoye _{6,

7,

8,

9} , J. L. MacManus-Driscoll _{6,

7,

8,

9} , M. Budde _{10,

11,

12,

13} , O. Bierwagen _{10,

11,

12,

13} , L. Wang _{14,

15,

16,

17,

18} , Y. Du _{14,

15,

16,

17,

18} , M. J. Wahila _{18,

19,

20,

21} , L. F. J. Piper _{18,

19,

20,

21} , T.-L. Lee _{9,

22,

23,

24} , H. J. Edwards _{9,

25,

26,

27} , V. R. Dhanak _{9,

25,

26,

27} , K. H. L. Zhang _{1,

2,

3,

4,

5}

Affiliation

Department of Chemical and Biochemical Engineering
College of Chemistry and Chemical Engineering
Xiamen University
Xiamen 361005
P. R. China
Department of Materials Science & Metallurgy
University of Cambridge
Cambridge
UK
Paul-Drude-Institut für Festkörperelektronik
Hausvogteiplatz 5-7
DE-10117 Berlin
Germany
Physical Sciences Division
Physical & Computational Sciences Directorate
Pacific Northwest National Laboratory
Richland
USA
Materials Science & Engineering
Binghamton University
Binghamton
Diamond Light Source Ltd.
Harwell Science and Innovation Campus
Didcot
Department of Physics
University of Liverpool
Liverpool L69 3BX

Correction for ‘Electronic and transport properties of Li-doped NiO epitaxial thin films’ by J. Y. Zhang et al., J. Mater. Chem. C, 2018, 6, 2275–2282.

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