Zeolite thin films with ordered nanopores and a low dielectric constant can serve as an insulation layer in microelectronic devices. However, the absence of a high-throughput deposition technique is a major technical hurdle in the industrial-scale production of zeolite thin films. Herein, we report on a scalable method, ultrasonic nozzle spray deposition (UNSD), which addresses this issue. A high-frequency standing wave introduced by the ultrasonic nozzle produces uniform droplets for the cast suspensions at a scale of tens to hundreds of micrometers, which results in a uniform thin film following the removal of the solvent. In this paper, we focus on the deposition of thin films comprising pure-silica zeolite MFI on a silicon wafer substrate. We systematically investigated how the quality of the zeolite thin films is affected by the composition of the cast suspensions and UNSD operating parameters. We identified the UNSD operating window that allows for the fabrication of uniform dense zeolite thin films at thicknesses ranging from hundreds of nanometers to 3 μm. We determined that zeolite MFI thin films prepared using UNSD outperformed those fabricated using conventional spin-on deposition in terms of uniform film thickness, low leakage current, and high Young's modulus.

具有有序的纳米孔和低介电常数的沸石薄膜可以用作微电子器件中的绝缘层。然而，在沸石薄膜的工业规模生产中，缺乏高通量沉积技术是主要的技术障碍。在本文中，我们报告了一种可扩展的方法，即超声波喷嘴喷雾沉积（UNSD），它解决了这个问题。超声波喷嘴引入的高频驻波会在数十至数百微米的范围内为浇铸悬浮液产生均匀的液滴，从而在除去溶剂后产生均匀的薄膜。在本文中，我们专注于在硅晶片基板上沉积包含纯硅沸石MFI的薄膜。我们系统地研究了沸石悬浮液的组成和UNSD操作参数如何影响沸石薄膜的质量。我们确定了UNSD操作窗口，该窗口允许制造厚度范围从数百纳米到3μm的均匀致密沸石薄膜。我们确定，在均匀的膜厚，低的漏电流和高的杨氏模量方面，使用UNSD制备的MFI沸石薄膜要优于使用常规旋涂法制备的MFI沸石薄膜。