Abstract A titanium dioxide (TiO 2 ) based memristor device having an active layer thickness of 10 nm was fabricated using radio frequency (RF) reactive sputtering and its resistive switching characteristics and carrier transport mechanisms were investigated. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to confirm the structural properties of the device. Measurement of the time-dependent current-voltage (I-V-t) was used to characterize resistive switching and memristive behavior. The characteristic pinched hysteresis I-V loops of the memristor were apparent. Bipolar and homogeneous resistive switching characteristics and a forming voltage of 2 V were detected in the device. The retention time exceeded 10 3 s and the endurance test was reasonably acceptable. In addition, the carrier transport mechanism of the device was revealed. The linear region of the low electric field demonstrated ohmic behavior, whereas the non-linear high electric field region was dominated by a Schottky emission carrier transport mechanism. A Poole-Frenkel emission mechanism acted as a secondary conduction mechanism. It was proposed that the Poole-Frenkel and Schottky emission mechanisms were associated with oxygen vacancies in the TiO 2 .

中文翻译：

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纳米级薄膜TiO 2 忆阻器的载流子传输机制和双极电阻切换行为

摘要 采用射频（RF）反应溅射技术制备了活性层厚度为10 nm的基于二氧化钛（TiO 2 ）的忆阻器器件，并研究了其阻变特性和载流子传输机制。使用扫描电子显微镜 (SEM) 和 X 射线光电子能谱 (XPS) 来确认器件的结构特性。随时间变化的电流-电压 (IVt) 的测量用于表征电阻开关和忆阻行为。忆阻器的特征收缩磁滞 IV 回线很明显。在器件中检测到双极和均质电阻开关特性以及 2 V 的形成电压。保留时间超过 10 3 s，耐久性测试是可以接受的。此外，该设备的载体传输机制被揭示。低电场的线性区域表现出欧姆行为，而非线性高电场区域由肖特基发射载流子传输机制主导。Poole-Frenkel 发射机制充当次级传导机制。提出Poole-Frenkel和Schottky发射机制与TiO 2 中的氧空位有关。