Toward non-volatile photonic memory: concept, material and design,Materials Horizons

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Toward non-volatile photonic memory: concept, material and design
Materials Horizons ( IF 12.2 ) Pub Date : 2018-03-21 00:00:00 , DOI: 10.1039/c8mh00110c
Yongbiao Zhai _{1,

2,

3,

4,

5} , Jia-Qin Yang _{1,

2,

3,

4} , Ye Zhou _{2,

3,

4,

6} , Jing-Yu Mao _{2,

3,

4,

6} , Yi Ren _{2,

3,

4,

6} , Vellaisamy A. L. Roy _{7,

8,

9} , Su-Ting Han _{1,

2,

3,

4}

Affiliation

Digital technology is one of the greatest modern breakthroughs, allowing sounds, words and images to be stored in binary form. However, there is a huge gap between the amount of data created daily and the capacities of existing storage media. Developing multibit memory in which 2ⁿ levels, typically represented by distinguishable current levels, can be achieved in a single cell is a critical specification for achieving high-density memory devices. Compared with electrically operated memory, photonic memory—in which electrical read-out is orthogonal to the photo-programming operation—promises high differentiation among different data levels. From another aspect, benefiting from its high density, multifunctionality, low power consumption, and multilevel data storage, photonic memory devices hold future promise for built-in, non-volatile memory and reconstructed logic operation and are expected to bridge this capacity gap. Thus, we present a review on the development of photonic memory, with a view towards inspiring more intriguing ideas on the elegant selection of materials and design of novel device structures that may finally induce major progress in the manufacture and application of photonic memory.

中文翻译：

迈向非易失性光子存储器：概念，材料和设计

数字技术是现代最大的突破之一，它允许将声音，文字和图像以二进制形式存储。但是，每天创建的数据量与现有存储介质的容量之间存在巨大差距。在其中开发2 ^n的多位存储器通常可以在单个单元中实现的通常由可区分的电流水平表示的高电平是实现高密度存储器件的关键规范。与电存储相比，电读出与光编程操作正交的光子存储器保证了不同数据级别之间的高度区分。从另一方面，得益于其高密度，多功能性，低功耗和多级数据存储，光子存储器件对内置，非易失性存储器和重构逻辑操作具有未来的希望，并有望弥合这种容量差距。因此，我们对光子记忆的发展进行了回顾，

更新日期：2018-03-21

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