Electronic properties of tin iodide hybrid perovskites: effect of indium doping,Materials Chemistry Frontiers

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Electronic properties of tin iodide hybrid perovskites: effect of indium doping
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2018-03-22 , DOI: 10.1039/c7qm00587c
Keisuke Kobayashi _{1,

2,

3,

4,

5} , Hiroyuki Hasegawa _{2,

6,

7} , Yukihiro Takahashi _{1,

2,

3,

4,

5} , Jun Harada _{1,

2,

3,

4,

5} , Tamotsu Inabe _{1,

2,

3,

4,

5}

Affiliation

Indium doping is introduced to tune the electronic properties of tin iodide hybrid perovskites. By applying this method, the resistivity of tin-iodide-based hybrid perovskites is reduced using indium doping without any change in its band gap. This mixed tin/indium iodide crystal perovskite is obtained using a solution process. The resistivity of the materials continuously increased from 10⁻² to 10⁻¹ Ω cm at room temperature, even when the doping level was less than 22 ppm. The metallic nature of this system decreased with increasing doping level, while the carrier density did not vary with the doping level. This method of foreign metal doping provides resistivity control of the tin iodide hybrid cubic perovskites without changing the band gap or carrier concentration.

中文翻译：

碘化锡杂化钙钛矿的电子性质：铟掺杂的影响

引入铟掺杂来调节碘化锡杂化钙钛矿的电子性能。通过应用此方法，使用铟掺杂可降低基于碘化锡的杂化钙钛矿的电阻率，而不会改变其带隙。使用溶液法获得该混合的锡/碘化铟晶体钙钛矿。材料的电阻率连续地从10增加到^-2至10 ^-1 Ω厘米在室温下，即使在掺杂水平低于22ppm的。该体系的金属性质随掺杂水平的提高而降低，而载流子密度不随掺杂水平而变化。这种外来金属掺杂的方法在不改变带隙或载流子浓度的情况下提供了碘化锡杂化立方钙钛矿的电阻率控制。

更新日期：2018-06-30

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