Ultraviolet Random Laser Based on a Single GaN Microwire,ACS Photonics

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Ultraviolet Random Laser Based on a Single GaN Microwire
ACS Photonics ( IF 6.5 ) Pub Date : 2018-03-20 00:00:00 , DOI: 10.1021/acsphotonics.8b00336
Yuhao Ren ₁ , Hai Zhu ₁ , Yanyan Wu ₁ , Guanlin Lou ₁ , Yunfeng Liang ₁ , Shuti Li ₂ , Shichen Su ₂ , Xuchun Gui ₃ , Zhiren Qiu ₁ , Zikang Tang ₄

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Random lasing (RL) from self-constructed localized cavities based on micropits scatters in a single GaN microwire (MW) was investigated. The spectra and spatial resolution of RL exhibits that the lasing modes originated from different regions in the MW. Temperature-dependent lasing measurement of GaN RL shows an excellent characteristic temperature of about 52 K. In addition, the dependence of spatial localized cavities’ dimension on the pumping intensity profile and temperature was studied by fast Fourier transform spectroscopy. For GaN RL, the optical feedback was supported by localized paths through the scattering effect of micropits in the MW. The scattering feedback mechanism for RL can avoid the enormous difficulty in fabricating artificial cavity structures for GaN. Hence, the results in this paper represent a low-cost technique to realize GaN-based ultraviolet laser diodes without the fabrication difficulty of cavity facets.

中文翻译：

基于单条GaN微线的紫外线随机激光器

研究了基于单个GaN微线（MW）中微坑散射的自构造局部腔的随机激射（RL）。RL的光谱和空间分辨率表明，激光模式起源于MW中的不同区域。GaN RL的随温度变化的激光测量显示出约52 K的优异特征温度。此外，通过快速傅立叶变换光谱研究了空间局部腔的尺寸对泵浦强度分布和温度的依赖性。对于GaN RL，光反馈由局部路径通过MW中微坑的散射效应来支持。用于RL的散射反馈机制可以避免制造GaN人工腔结构的巨大困难。因此，

更新日期：2018-03-20

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