Abstract In this work, cross-linked poly(4-vinylphenol) (PVP) was utilized in printed single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) as the gate dielectric layer to achieve low operating voltage, environmental stability and high flexibility. The printed top-gate TFTs on polyethylene terephthalate (PET) substrates exhibited effective mobility up to 8.4 cm2V−1s−1 (based on device capacitances measured at 0.1 Hz), on/off ratio of 106 and subthreshold swing (ss) of 63.8 mV/dec at operation voltage of only 1 V. The printed TFTs exhibited excellent mechanical flexibility and stability under ambient conditions due to the use of cross-linked PVP as dielectric layers. No obvious discrepancies in electrical properties were observed after bending 15000 cycles at the radius of 5 mm. A photosensitive light-emitting diode (LED) circuit was constructed, which was composed of two commercial LEDs and the printed SWCNT TFTs. One LED was mounted on top of the gate electrode, acting as a photon sensor to modulate the gate voltage of TFT. The second LED was connected to the source electrode to act as an illuminating device. The circuit could drive the illuminating LED at Vdd of −0.75 V and Vds = −2 V with lighting intensity varying from 0 to 8.96 μW/cm2.

中文翻译：

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使用交联聚（4-乙烯基苯酚）作为栅极电介质的高柔性印刷碳纳米管薄膜晶体管及其在光敏发光二极管电路中的应用

摘要 在这项工作中，交联聚（4-乙烯基苯酚）（PVP）被用于印刷单壁碳纳米管（SWCNT）薄膜晶体管（TFT）作为栅极介电层，以实现低工作电压、环境稳定性和高灵活性。在聚对苯二甲酸乙二醇酯 (PET) 基板上印刷的顶栅 TFT 表现出高达 8.4 cm2V-1s-1 的有效迁移率（基于在 0.1 Hz 下测量的器件电容）、106 的开/关比和 63.8 mV 的亚阈值摆幅 (ss) /dec 在仅 1 V 的工作电压下。由于使用交联 PVP 作为介电层，印刷 TFT​​ 在环境条件下表现出优异的机械柔韧性和稳定性。在半径为 5 mm 处弯曲 15000 次循环后，未观察到电性能的明显差异。构建了一个光敏发光二极管 (LED) 电路，该电路由两个商用 LED 和印刷的 SWCNT TFT 组成。一个 LED 安装在栅极电极的顶部，充当光子传感器来调制 TFT 的栅极电压。第二个 LED 连接到源电极以充当照明设备。该电路可以在 -0.75 V 的 Vdd 和 Vds = -2 V 下驱动照明 LED，照明强度从 0 到 8.96 μW/cm2 不等。