Charge carrier mobility in transparent conducting oxide (TCO) films is mainly limited by impurity scattering, grain boundary scattering, and a hopping transport mechanism. We enhanced the mobility in nanocrystal (NC)-based TCO films, exceeding even typical values found in sputtered thin films, by addressing each of these scattering factors. Impurity scattering is diminished by incorporating cerium as a dopant in indium oxide NCs instead of the more typical dopant, tin. Grain boundary scattering is reduced by using large NCs with a size of 21 nm, which nonetheless were sufficiently small to avoid haze due to light scattering. In-filling of the precursor solution followed by annealing results in a NC-based composite film which conducts electrons through metal-like transport at room temperature, readily distinguished by the positive temperature coefficient of resistance. Cerium-doped indium oxide (Ce:In₂O₃) NC-based composite films achieve a high mobility of 56.0 cm²/V·s, and a low resistivity of 1.25 × 10^–3 Ω·cm. The films are transparent to a broad range of visible and near-infrared light from 400 nm to at least 2500 nm wavelength. On the basis of the high conductivity and high transparency of the Ce:In₂O₃ NC-based composite films, the films are successfully applied as transparent electrodes within an electrochromic device.

中文翻译：

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基于纳米晶体的透明导电氧化物薄膜的高迁移率

透明导电氧化物（TCO）膜中的载流子迁移率主要受杂质散射，晶界散射和跳跃传输机制的限制。通过解决这些散射因素，我们提高了基于纳米晶体（NC）的TCO薄膜的迁移率，甚至超过了溅射薄膜中的典型值。通过将铈作为掺杂剂（而不是更典型的掺杂剂锡）掺入氧化铟NC中，可以减少杂质扩散。通过使用尺寸为21 nm的大型NC，可以减少晶界散射，但这些NC足够小，可以避免由于光散射而引起的雾度。填充前体溶液，然后进行退火，得到了基于NC的复合膜，该复合膜在室温下通过类金属的运输来传导电子，通过电阻的正温度系数很容易区分。掺铈的氧化铟（Ce：In₂ ö ₃）基于NC-复合薄膜达到56.0厘米的高迁移率² / V·s，且1.25×10的低电阻率^-3 Ω·cm以下。薄膜对400 nm至至少2500 nm波长的各种可见光和近红外光都是透明的。基于Ce：In ₂ O ₃ NC基复合膜的高导电性和高透明性，该膜已成功地用作电致变色器件中的透明电极。