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Endotaxial growth of FexGe single-crystals on Ge(001) substrates†
CrystEngComm ( IF 2.6 ) Pub Date : 2018-03-20 00:00:00 , DOI: 10.1039/c8ce00211h
Wen-Ya Wu 1, 2, 3 , Weng Weei Tjiu 1, 2, 3 , Wei Wan 4, 5, 6, 7 , Hui Ru Tan 1, 2, 3 , Siew Lang Teo 1, 2, 3 , Shifeng Guo 1, 2, 3 , Sze Ter Lim 3, 8, 9 , Ming Lin 1, 2, 3
Affiliation  

Revealing the “structure–property” relationship is nontrivial for the application of materials. The magnetic configurations of FeGe are strongly dependent on the internal structures and positions of Fe and Ge atoms, e.g., B20-type cubic phase configuring into magnetic skyrmions. Although endotaxial FexGe islands on (001)Ge substrate can be obtained with a dynamically controlled growth process, it is not possible to obtain the crystal structural information from conventional approaches, such as X-ray diffraction or 2D electron diffractions due to the embedded growth structures at the nanometer scale, which are too small to be probed. Through a 3D rotational electron diffraction method combined with high resolution transmission electron microscopy, we have successfully determined the specific phase of each FexGe island on the Ge substrate. Three major phases (two hexagonal and one monoclinic) were found existing in the FexGe islands with nearly equal probability and independent of the deposition temperatures and time. All the islands with different phases were inclined to {111}Ge planes, which was due to a comparatively higher energy barrier for Fe atom diffusion through {111}Ge than other Ge planes. The epitaxial growth relationship at the interface was as follows: FeGemono(4−2−1)//Ge(111), FeGemono[15−6]//Ge[1−10], Fe3Ge2(201)//Ge(111) and Fe3Ge2[−112]//Ge[1−10], Fe13Ge8(40−1)//Ge(111) and Fe13Ge8[124]//Ge[1−10]. Ferromagnetism for the as-deposited samples was observed via SQUID, which most probably is attributed to the hexagonal FeGe phases.

中文翻译:

在Ge(001)衬底上 内生Fe x Ge单晶

对于材料的应用而言,揭示“结构-属性”的关系并非无关紧要。FeGe的磁性构型强烈依赖于Fe和Ge原子的内部结构和位置,例如B20型立方晶相构成了磁性天体。尽管在(001)Ge上有内向Fe x Ge岛衬底可以通过动态控制的生长过程获得,由于纳米级嵌入的生长结构太小,无法从常规方法(例如X射线衍射或2D电子衍射)获得晶体结构信息有待探索。通过结合高分辨率透射电子显微镜的3D旋转电子衍射方法,我们已成功确定了Ge衬底上每个Fe x Ge岛的比相。在Fe x Ge岛中发现了三个主要相(两个六方相和一个单斜相),几率几乎相等,并且与沉积温度和时间无关。所有具有不同相位的岛都倾向于{111} Ge这是由于Fe原子通过{111} Ge扩散的能垒比其他Ge平面更高。在界面处的外延生长关系如下:FeGe(4-2-1)//锗(111),FeGe单声道[15-6] //葛[1-10],铁3的Ge 2(201) // Ge(111)和Fe 3 Ge 2 [−112] // Ge [1-10],Fe 13 Ge 8(40-1)// Ge(111)和Fe 13 Ge 8 [124] // Ge [1-10]。通过SQUID观察到沉积样品的铁磁性,这很可能归因于六角形的FeGe相。
更新日期:2018-03-20
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