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Photoluminescence properties of SiC/SiO 2 heterojunctions obtained by TiO 2 -assisted chemical vapour deposition
Ceramics International ( IF 5.1 ) Pub Date : 2018-07-01 , DOI: 10.1016/j.ceramint.2018.03.152
Xiaoyu Chen , Xinhong Liu , Xinjia Geng , Quanli Jia

Abstract SiC/SiO 2 heterojunctions have been synthesized at 1400 °C by chemical vapor deposition, using Si and phenolic resin powder as starting materials and TiO 2 nanoparticles as catalyst. The morphology of the SiC/SiO 2 heterojunctions consists of chain-bead shaped and core-shell chains, and the heterojunctions are up to several hundred microns in length, with diameters of 0.3–1 µm in the chains and 2–8 µm in the beads. A vapor-solid tip-growth mechanism for the formation of the heterojunctions is proposed. Photoluminescence spectra of SiC/SiO 2 heterojunctions exhibit a significant blue-shift, which indicates that these materials are ideal for application in new optoelectronic devices. The TiO 2 nanoparticles play a key role in promoting the formation and growth of the heterojunction nanochains as well as in enhancing their luminescence properties.

中文翻译:

TiO 2 辅助化学气相沉积获得的SiC/SiO 2 异质结的光致发光性能

摘要 以硅和酚醛树脂粉末为原料,TiO 2 纳米颗粒为催化剂,通过化学气相沉积在1400 °C下合成了SiC/SiO 2 异质结。SiC/SiO 2 异质结的形态由链珠状链和核壳链组成,异质结的长度可达数百微米,链中的直径为0.3-1 µm,链中的直径为2-8 µm。珠子。提出了形成异质结的气固尖端生长机制。SiC/SiO 2 异质结的光致发光光谱表现出明显的蓝移,这表明这些材料非常适合应用于新型光电器件。
更新日期:2018-07-01
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