Experimental data from a 17.5% efficient perovskite solar cell has been used to develop a self-consistent device model using Solar Cell Capacitance Simulator (SCAPS). Electronic properties of the individual layers, such as doping density of compact TiO2 (c-TiO2), doping and defect density of perovskite, etc. are extracted from experimental data. The only fitting parameters in the model are the defect densities at spiro-MeOTAD/perovskite interface (IL-1) and perovskite/TiO2 interface (IL-2). The simulated current-voltage (J-V) characteristics and Mott-Schottky plot results match extremely well with the experimentally measured plots, validating the device model. The model was further used to extract insights into the loss mechanism of the high-efficiency perovskite solar cells. Simulations revealed that defect density at IL-1 interface has strong impact on the open-circuit voltage (V-OC), while defect density in the perovskite and IL2 interface has a major impact on short-circuit current density (J(SC)). (C) 2018 Elsevier B.V. All rights reserved.

中文翻译：

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界面缺陷密度对钙钛矿太阳能电池性能的影响：模拟与实验的相关性

来自效率为 17.5% 的钙钛矿太阳能电池的实验数据已用于开发使用太阳能电池电容模拟器 (SCAPS) 的自洽器件模型。从实验数据中提取了各个层的电子特性，例如致密 TiO2 (c-TiO2) 的掺杂密度、钙钛矿的掺杂和缺陷密度等。模型中唯一的拟合参数是螺-MeOTAD/钙钛矿界面 (IL-1) 和钙钛矿/TiO2 界面 (IL-2) 的缺陷密度。模拟的电流-电压 (JV) 特性和莫特-肖特基图结果与实验测量图非常吻合，从而验证了器件模型。该模型进一步用于深入了解高效钙钛矿太阳能电池的损耗机制。模拟表明，IL-1 界面处的缺陷密度对开路电压 (V-OC) 有很大影响，而钙钛矿和 IL2 界面处的缺陷密度对短路电流密度 (J(SC)) 有重大影响. (C) 2018 Elsevier BV 版权所有。