Abstract The depressing texturation and stubborn directional saw marks on diamond wire sawing (DWS) polysilicon wafers has resulted in severe limitations for the mass application of DWS technology in PV market. Herein, a simple and low-cost copper-assisted chemical etching method was presented to controllably nano-texturing DWS polysilicon wafers. The work firstly reveals the adjustment of anion species in copper salts can readily control the nanostructure during the copper-catalyzed etching process. After etching, the obtained inverted pyramid structure can effectively reduce the reflectivity of the silicon wafer surface, the reflectance can be as low as 5.8% in the wavelength range of 300–1100 nm. Moreover, the surface saw marks are removed after etching, and the novel texture method guarantee the low recombination rates. The effective texturing method shows a promising potential application in the photovoltaic field.

中文翻译：

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通过低成本铜催化化学蚀刻对金刚石线锯多晶硅晶片进行可控纳米制绒

摘要 金刚石线锯（DWS）多晶硅晶片上压抑的纹理和顽固的定向锯痕严重限制了DWS技术在光伏市场的大规模应用。在此，提出了一种简单且低成本的铜辅助化学蚀刻方法来可控地纳米制绒 DWS 多晶硅晶片。该工作首先揭示了铜盐中阴离子种类的调节可以很容易地控制铜催化蚀刻过程中的纳米结构。蚀刻后得到的倒金字塔结构可以有效降低硅片表面的反射率，在300-1100 nm波长范围内反射率可低至5.8%。此外，蚀刻后去除了表面锯痕，新的纹理方法保证了低复合率。