A solid solution (Ti,W)₃SiC₂ possessing good oxidation resistance and low area-specific resistance (ASR) after oxidation has been synthesized by an in-situ hot pressing process. The oxidation rate constant at 800 °C in air is 6.29 × 10⁻¹⁴ g² cm⁻⁴ s⁻¹ for (Ti,W)₃SiC₂. The formed single-layer oxide is composed of W doped rutile TiO₂ and amorphous SiO₂. SiO₂ is evenly inlaid in the communicative body frame of TiO₂. W doped in TiO₂ mainly exists as W⁶⁺. W doping not only hinders the outward diffusion of Ti by decreasing the concentration of native Ti interstitials in TiO₂, but also restrains the inward diffusion of oxygen by decreasing the concentration of O vacancies. Furthermore, W dopant in TiO₂ enhances the electrical conductivity of TiO₂ by increasing the concentration of semi-free electron. Therefore, the low ASR of (Ti,W)₃SiC₂ after oxidation owes to high electrical conductivity of TiO₂ as well as the reduced thickness of oxide scale. All the results render (Ti_1-xW_x)₃SiC₂ promising as interconnects for the intermediate temperature solid oxide fuel cell.

通过原位热压工艺合成了具有良好的抗氧化性和氧化后的低面积比电阻（ASR）的固溶体（Ti，W）₃ SiC ₂。对于（Ti，W）₃ SiC ₂，在空气中800℃下的氧化速率常数为6.29×10 ^-14  g ²  cm ^-4  s ^-1。形成的单层氧化物由掺W的金红石TiO ₂和无定形SiO _2组成。SiO ₂被均匀地嵌入到TiO ₂的通信体框架中。掺杂在TiO ₂中的W主要以W ^6+的形式存在。W掺杂不仅通过降低TiO ₂中天然Ti间隙的浓度来阻止Ti的向外扩散，而且通过降低O空位的浓度来抑制氧的向内扩散。此外，以TiOW¯¯掺杂剂₂增强TiO 2的电导率₂通过增加半自由电子的浓度。因此，氧化后（Ti，W）₃ SiC ₂的低ASR归因于TiO _2的高电导率以及减小的氧化皮厚度。所有结果呈现（Ti _1-x W _x）₃ SiC ₂ 有望作为中温固体氧化物燃料电池的互连件。