Abstract Amorphous In-Ga-Zn-O experiences device instability in thin-film transistors (TFTs) due to the vulnerability of oxide channel materials under ambient conditions. Nitrogenation of In-Ga-Zn-O TFTs by partial oxygen substation of nitrogen was performed to enhance stability. The nitrogenated In-Ga-Zn-O thin films were deposited under plasma conditions involving nitrogen gas molecules. The TFT stability was tested under various conditions of temperature, illumination, time, and sweeping. Despite the minor weakness at elevated operation temperature, the nitrogenated In-Ga-Zn-O TFTs exhibited superior tolerance against sweeping operations in TFT devices, illumination, and time-dependent degradation. The improved stability is attributed to the incorporation of nitrogen into In-Ga-Zn-O via oxygen vacancy and its corresponding interface trap improvement.

中文翻译：

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非晶铟镓锌氧氮化物薄膜晶体管的物理化学表征

摘要 由于氧化物沟道材料在环境条件下的脆弱性，非晶 In-Ga-Zn-O 在薄膜晶体管 (TFT) 中会遇到器件不稳定性。通过氮的部分氧变电站对 In-Ga-Zn-O TFT 进行氮化以提高稳定性。在涉及氮气分子的等离子体条件下沉积氮化的 In-Ga-Zn-O 薄膜。在各种温度、光照、时间和扫描条件下测试 TFT 稳定性。尽管在升高的工作温度下有轻微的弱点，氮化的 In-Ga-Zn-O TFT 对 TFT 器件中的扫描操作、照明和时间相关的退化表现出优异的耐受性。