Abstract A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 µm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm 2 /Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

中文翻译：

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通过 AlSb/GaSb 缓冲液在 Si 上生长和表征 InSb 红外光电导体

摘要 使用分子束外延 (MBE) 通过 AlSb/GaSb 缓冲液在 6° 切割 (1 0 0) Si 衬底上生长 99.6% 松弛的 InSb 层。首先在 Si 上生长 200 nm GaSb 缓冲液，它们之间的晶格失配通过由均匀分布的 90° 失配位错组成的界面失配 (IMF) 阵列来适应。在 GaSb 的生长过程中引入 Si delta 掺杂以降低穿透位错的密度。随后，生长 50 nm AlSb 缓冲液，然后是 0.8 µm InSb 层。InSb 层表现出 22,300 cm 2 /Vs 的 300 K 电子迁移率。Si 上的 InSb 光电导体在 700 °C 维持的黑体下具有从 77 K 到 200 K 的光电导增益。