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Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide
Applied Physics Letters ( IF 3.5 ) Pub Date : 2018-03-12 , DOI: 10.1063/1.5020229
Masaru Kuramoto 1 , Seiichiro Kobayashi 1 , Takanobu Akagi 1 , Komei Tazawa 1 , Kazufumi Tanaka 1 , Tatsuma Saito 1 , Tetsuya Takeuchi 2
Affiliation  

We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, ...

中文翻译:

使用 SiO2 埋入横向折射率波导提高 GaN 基垂直腔面发射激光器的斜率效率和输出功率

通过降低前腔镜的内部损耗和反射率,我们在连续波 (CW) 操作下从 441 nm GaN 基垂直腔面发射激光器 (VCSEL) 实现了 6 mW 的高输出功率。对内部损耗的初步分析显示,在没有横向光学限制 (LOC) 的传统 GaN 基 VCSEL 中,横向辐射损耗非常高。引入 LOC 结构将斜率效率提高了 4.7 倍,在降低前镜反射率后进一步提高到 6.7 倍。结果是脉冲操作下的斜率效率为 0.87 W/A,外部微分量子效率为 32%。倒装芯片键合的 VCSEL 也表现出 0 的高斜率效率。在 CW 操作下,前端输出的 64 W/A 和 23% 的外部差分量子效率。腔镜的反射率通过将 AlInN/GaN 分布式布拉格反射器对的数量从 46 变化到 42 来调整,对应于从 99.8% 到 99.5% 的反射率值。这些结果表明,降低内部损耗和腔镜控制相结合是获得高输出 GaN 基 VCSEL 的非常有效的方法。我们已经从 441 nm GaN 基垂直腔表面实现了 6 mW 的高输出功率连续波 (CW) 操作下的发射激光器 (VCSEL),通过减少前腔镜的内部损耗和反射率。对内部损耗的初步分析表明,在没有横向光学限制 (LOC) 的传统 GaN 基 VCSEL 中,横向辐射损耗非常高。引入 LOC 结构将斜率效率提高了 4.7 倍,在降低前镜反射率后进一步提高到 6.7 倍。结果是脉冲操作下的斜率效率为 0.87 W/A,外部微分量子效率为 32%。倒装芯片键合的 VCSEL 还表现出 0.64 W/A 的高斜率效率和 CW 操作下正面输出的 23% 外部微分量子效率。通过将 AlInN/GaN 分布式布喇格反射器对的数量从 46 改变到 42 来调整腔镜的反射率,... 引入 LOC 结构将斜率效率提高了 4.7 倍,在降低前镜反射率后进一步提高到 6.7 倍。结果是脉冲操作下的斜率效率为 0.87 W/A,外部微分量子效率为 32%。倒装芯片键合的 VCSEL 还表现出 0.64 W/A 的高斜率效率和 CW 操作下正面输出的 23% 外部微分量子效率。通过将 AlInN/GaN 分布式布喇格反射器对的数量从 46 改变到 42 来调整腔镜的反射率,... 引入 LOC 结构将斜率效率提高了 4.7 倍,在降低前镜反射率后进一步提高到 6.7 倍。结果是脉冲操作下的斜率效率为 0.87 W/A,外部微分量子效率为 32%。倒装芯片键合的 VCSEL 还表现出 0.64 W/A 的高斜率效率和 CW 操作下正面输出的 23% 外部微分量子效率。腔镜的反射率通过将 AlInN/GaN 分布式布拉格反射器对的数量从 46 改变到 42 来调整,... 倒装芯片键合的 VCSEL 还表现出 0.64 W/A 的高斜率效率和 CW 操作下正面输出的 23% 外部微分量子效率。通过将 AlInN/GaN 分布式布喇格反射器对的数量从 46 改变到 42 来调整腔镜的反射率,... 倒装芯片键合的 VCSEL 还表现出 0.64 W/A 的高斜率效率和 CW 操作下正面输出的 23% 外部微分量子效率。通过将 AlInN/GaN 分布式布喇格反射器对的数量从 46 改变到 42 来调整腔镜的反射率,...
更新日期:2018-03-12
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