The nonmetal electrode material Indium Tin Oxide (ITO) has advantages of excellent conductivity, higher adhesion, and interface stability, showing potential to replace the metallic contacts for fabrication of CdZnTe (CZT) X/γ-ray detectors. In this work, high quality ITO electrodes for n-type CZT crystals were prepared by magnetron sputtering under a sputtering power of 75 W and a sputtering pressure of 0.6 Pa. A low dark current of ∼1 nA is achieved for the 5 × 5 × 2 mm3 ITO/CZT/ITO planar device under 100 V bias. The characteristics of Schottky contact are presented in the room temperature I-V curves, which are similar to those of the Au contact detectors. Based on the thermoelectric emission theory, the contact barrier and resistance of ITO electrodes are evaluated to be 0.902–0.939 eV and 0.87–3.56 × 108 Ω, respectively, which are consistent with the values of the Au electrodes. The ITO/CZT/ITO structure detector exhibits a superior energy resolution of 6.5% illuminated by the uncollimated 241Am @59.5...

中文翻译：

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n-CdZnTe γ-射线探测器接触铟锡氧化物的制备

非金属电极材料氧化铟锡 (ITO) 具有优异的导电性、更高的附着力和界面稳定性等优点，显示出替代金属触点制造 CdZnTe (CZT) X/γ 射线探测器的潜力。在这项工作中，通过磁控溅射在 75 W 的溅射功率和 0.6 Pa 的溅射压力下制备了用于 n 型 CZT 晶体的高质量 ITO 电极。 5 × 5 × 的低暗电流达到 1 nA 100 V 偏压下的 2 mm3 ITO/CZT/ITO 平面器件。肖特基接触的特性在室温 IV 曲线中呈现，与 Au 接触探测器的特性相似。根据热电发射理论，ITO电极的接触势垒和电阻分别为0.902-0.939 eV和0.87-3.56 × 108 Ω，这与 Au 电极的值一致。ITO/CZT/ITO 结构探测器在非准直 241Am @59.5...