Abstract Et 2 BiTeEt was used as single source precursor for the deposition of Bi 2 Te 3 thin films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) at very low substrate temperatures. Stoichiometric and crystalline Bi 2 Te 3 films were grown at 230 °C, which is approximately 100 °C lower compared to conventional MOCVD processes using one metal organic precursors for each element. The Bi 2 Te 3 films were characterized using scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The elemental composition of the films, which was determined by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy, was found to be strongly dependent of the substrate temperature.

中文翻译：

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使用 Et 2 BiTeEt 作为单源前体的 Bi 2 Te 3 薄膜的低温 MOCVD 沉积。

摘要 Et 2 BiTeEt 被用作单源前驱体，通过金属有机化学气相沉积 (MOCVD) 在极低的衬底温度下在 Si(1 0 0) 衬底上沉积 Bi 2 Te 3 薄膜。化学计量和结晶 Bi 2 Te 3 薄膜在 230 °C 下生长，与对每种元素使用一种金属有机前体的传统 MOCVD 工艺相比，该温度低约 100 °C。使用扫描电子显微镜、高分辨率透射电子显微镜和X射线衍射表征Bi 2 Te 3 膜。发现由能量色散 X 射线光谱和 X 射线光电子能谱确定的薄膜的元素组成强烈依赖于基板温度。