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Enriching lanthanide single-ion magnetism through symmetry and axiality
Chemical Communications ( IF 4.3 ) Pub Date : 2018-03-13 00:00:00 , DOI: 10.1039/c7cc09956h Sandeep K. Gupta 1, 2, 3, 4 , Ramaswamy Murugavel 1, 2, 3, 4
Chemical Communications ( IF 4.3 ) Pub Date : 2018-03-13 00:00:00 , DOI: 10.1039/c7cc09956h Sandeep K. Gupta 1, 2, 3, 4 , Ramaswamy Murugavel 1, 2, 3, 4
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Rapidly growing modern information technology demands energy and cost efficient tools that can efficiently store and process a large amount of data. However, the miniaturization technology that was being used to boost the performance of the electronic devices, keeping up with the pace as estimated by Moore's law, is reaching its limit. To overcome these challenges, several alternative routes that can eventually mimic the modern electronics fabrication using silicon have been proposed. Single molecule magnets (SMMs), being considered as one of the potential alternatives, have gone through significant progress and the focus has shifted from the use of polynuclear clusters to mononuclear complexes in the last few years. The recent frenzy in the field of SMMs is driven by a better understanding of the effects of crystal field (CF) and molecular symmetry on the magnetic properties, especially in the case of mononuclear paramagnetic complexes, apart from other controlling factors. This has led to the advent of highly anisotropic single-ion magnets (SIMs) with magnetic blocking temperatures as high as 60 K and anisotropic energy barriers over 1800 K. This article overviews our recent research in the light of the emergence of the importance of CF and symmetry in 4f ion based single-ion magnets (SIMs), especially in the context of SIMs with D5h symmetry, apart from commenting on the synthetic efforts adopted to place these metal ions in unusual coordination geometries.
中文翻译：
通过对称性和轴向性富集镧系单离子磁性
快速发展的现代信息技术需要能源和具有成本效益的工具，这些工具可以有效地存储和处理大量数据。然而，用于提高电子设备性能的小型化技术正赶上摩尔定律所估计的步伐，该技术已与摩尔定律所估计的步伐保持一致。为了克服这些挑战，已经提出了最终可以模仿使用硅的现代电子制造的几种替代路线。单分子磁体（SMM）被认为是潜在的替代方法之一，已经取得了重大进展，并且在过去几年中，重点已从多核簇的使用转移到单核复合物。对SMM领域最近的狂热是由对晶体场（CF）和分子对称性对磁性能的影响的更好理解引起的，尤其是在单核顺磁性配合物的情况下，除了其他控制因素。这导致了高度各向异性的单离子磁体（SIM）的出现，其磁阻温度高达60 K，各向异性势垒超过1800K。本文根据CF重要性的出现概述了我们最近的研究和基于4f离子的单离子磁体（SIM）的对称性，尤其是在具有D 5h对称性，除了对将这些金属离子置于不寻常的配位几何结构中所做的合成努力进行评论之外。
更新日期：2018-03-13
中文翻译：
通过对称性和轴向性富集镧系单离子磁性
快速发展的现代信息技术需要能源和具有成本效益的工具，这些工具可以有效地存储和处理大量数据。然而，用于提高电子设备性能的小型化技术正赶上摩尔定律所估计的步伐，该技术已与摩尔定律所估计的步伐保持一致。为了克服这些挑战，已经提出了最终可以模仿使用硅的现代电子制造的几种替代路线。单分子磁体（SMM）被认为是潜在的替代方法之一，已经取得了重大进展，并且在过去几年中，重点已从多核簇的使用转移到单核复合物。对SMM领域最近的狂热是由对晶体场（CF）和分子对称性对磁性能的影响的更好理解引起的，尤其是在单核顺磁性配合物的情况下，除了其他控制因素。这导致了高度各向异性的单离子磁体（SIM）的出现，其磁阻温度高达60 K，各向异性势垒超过1800K。本文根据CF重要性的出现概述了我们最近的研究和基于4f离子的单离子磁体（SIM）的对称性，尤其是在具有D 5h对称性，除了对将这些金属离子置于不寻常的配位几何结构中所做的合成努力进行评论之外。
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