Transparent and highly oriented 3C-SiC bulks were speedily fabricated at deposition temperature (T_dep) of 1623 K by halide laser chemical vapor deposition (HLCVD). The effect of total pressure (P_tot) on the optical transmittance, preferred orientation, microstructure, deposition rate (R_dep) and micro-hardness were investigated. The maximum R_dep of the transparent 3C-SiC reached 2450 μm/h at P_tot = 10 kPa. With an increase in P_tot, the transmittance of 3C-SiC bulks increased firstly, and then decreased. At P_tot = 10 kPa, 3C-SiC bulk, a highly <111>-oriented and low density of defects, showed the highest transmittance, greater than 55% in the wavelength range of 800–1100 nm. At P_tot = 4 kPa and 20 kPa, 3C-SiC bulks showed much lower transmittance, in which contained poorly oriented grains and numerous defects. The Vickers micro-hardness of 3C-SiC bulks increased with increasing P_tot and showed the highest value of 34.8 GPa at P_tot = 40 kPa.

通过卤化物激光化学气相沉积（HLCVD），在1623 K的沉积温度（T _dep）下，快速制造出透明且高度取向的3C-SiC块体。研究了总压力（P _tot）对光学透射率，择优取向，微观结构，沉积速率（R _dep）和显微硬度的影响。透明3C-SiC的最大R _dep在P _tot  = 10 kPa时达到2450μm/ h 。随着P _tot的增加，3C-SiC块体的透射率先上升，然后下降。在P _TOT = 10 kPa，3C-SiC块体，高度<111>取向且缺陷密度低，显示出最高的透射率，在800-1100 nm的波长范围内大于55％。在P _tot  = 4 kPa和20 kPa时，3C-SiC块体的透射率要低得多，其中包含取向差的晶粒和许多缺陷。3C-SiC块体的维氏显微硬度随P _tot的增加而增加，并且在P _tot  = 40 kPa时显示最高值为34.8 GPa 。