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Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-03-12 00:00:00 , DOI: 10.1021/acsami.7b16634 David Choi , Nirakar Poudel 1 , Saungeun Park , Deji Akinwande , Stephen B. Cronin 1 , Kenji Watanabe 2 , Takashi Taniguchi 2 , Zhen Yao , Li Shi
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-03-12 00:00:00 , DOI: 10.1021/acsami.7b16634 David Choi , Nirakar Poudel 1 , Saungeun Park , Deji Akinwande , Stephen B. Cronin 1 , Kenji Watanabe 2 , Takashi Taniguchi 2 , Zhen Yao , Li Shi
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Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO2/Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO2/Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO2/Si, resulting in a larger degree of temperature reduction.
中文翻译：
六方氮化硼热扩散大幅度降低石墨烯电子器件中的热点温度
扫描热显微镜测量表明，在石墨烯与SiO 2 / Si衬底或100μm厚的康宁柔性柳玻璃（WG）衬底之间包括高导热六角形氮化硼（h-BN）散热层具有显着的热效益。。在相同的功率密度下，硅基板上的80 nm厚h-BN层可以使热点温度降低2.2倍，而WG基板上的35 nm厚h-BN层足以获得一个因子。 4.1减少。h-BN散热器对WG的影响大于对SiO 2的影响/ Si被归因于与通过硅上的薄氧化物层的一维热传导相比，用于向厚的低导热率WG衬底进行三维热传导的每单位面积的有效传热系数更小。因此，h-BN的横向热扩散长度在WG上比在SiO 2 / Si上大得多，从而导致更大程度的温度降低。
更新日期：2018-03-12
中文翻译：
六方氮化硼热扩散大幅度降低石墨烯电子器件中的热点温度
扫描热显微镜测量表明，在石墨烯与SiO 2 / Si衬底或100μm厚的康宁柔性柳玻璃（WG）衬底之间包括高导热六角形氮化硼（h-BN）散热层具有显着的热效益。。在相同的功率密度下，硅基板上的80 nm厚h-BN层可以使热点温度降低2.2倍，而WG基板上的35 nm厚h-BN层足以获得一个因子。 4.1减少。h-BN散热器对WG的影响大于对SiO 2的影响/ Si被归因于与通过硅上的薄氧化物层的一维热传导相比，用于向厚的低导热率WG衬底进行三维热传导的每单位面积的有效传热系数更小。因此，h-BN的横向热扩散长度在WG上比在SiO 2 / Si上大得多，从而导致更大程度的温度降低。
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