Transient Resistive Switching Memory of CsPbBr3 Thin Films,Advanced Electronic Materials

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Transient Resistive Switching Memory of CsPbBr3 Thin Films
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-03-12 , DOI: 10.1002/aelm.201700596
Qiqi Lin ₁ , Wei Hu ₁ , Zhigang Zang ₁ , Miao Zhou ₁ , Juan Du ₂ , Ming Wang ₁ , Shuai Han ₁ , Xiaosheng Tang ₁

Affiliation

Recently, transient electronic devices play an indispensable role in modern disposable electronics and create potential application fields that cannot be addressed with conventional electronic devices or systems. However, the choice of transient materials has some limitations. It is therefore of great significance to explore transient electrodes, materials, and substrates that can undergo rapid and complete degradation on demand. In this work, the CsPbBr₃ thin films as the switching layer are utilized to implement transient memory devices with a flexible Ag/CsPbBr₃/PEDOT:PSS/ITO structure. This flexible nonvolatile memory device exhibits reproducible resistive switching performance, uniform switching voltages, concentrated distributions of high and low resistance states, and good mechanical stability over 50 bending times. The elemental mapping images of the memory device reveal that the resistive switching mechanism is interpreted through electrochemical formation/dissolution of metallic Ag filaments in CsPbBr₃ layer. More importantly, it is demonstrated that the CsPbBr₃ films and memory device can be dissolved rapidly in deionized water within 60 s, showing the transient characteristics. In addition, the optical and electrical properties disappear completely after the device dissolved in deionized water. This work demonstrates that the all‐inorganic perovskite CsPbBr₃‐based transient memory devices have great potential for applications in secure data storage systems and disposable electronics.

中文翻译：

CsPbBr3薄膜的瞬态电阻开关存储器

最近，瞬态电子设备在现代一次性电子设备中起着不可或缺的作用，并创造了常规电子设备或系统无法解决的潜在应用领域。但是，瞬态材料的选择有一些局限性。因此，探索瞬态电极，材料和基材可以按需快速，完全降解具有重要意义。在这项工作中，将CsPbBr ₃薄膜用作开关层，以实现具有柔性Ag / CsPbBr _3的瞬态存储器件/ PEDOT：PSS / ITO结构。这种柔性的非易失性存储器件具有可再现的电阻开关性能，均匀的开关电压，高和低电阻状态的集中分布以及在50次弯曲时间内的良好机械稳定性。存储器件的元素映射图显示，电阻切换机制是通过CsPbBr ₃层中金属Ag细丝的电化学形成/溶解来解释的。更重要的是，证明了CsPbBr ₃薄膜和存储设备可以在60 s内迅速溶于去离子水中，表现出瞬时特性。此外，将设备溶解在去离子水中后，光学和电学性能会完全消失。这项工作表明，基于全无机钙钛矿CsPbBr ₃的瞬态存储设备在安全数据存储系统和一次性电子产品中具有巨大的应用潜力。

更新日期：2018-03-12

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