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Influences of W Content on the Phase Transformation Properties and the Associated Stress Change in Thin Film Substrate Combinations Studied by Fabrication and Characterization of Thin Film V1–xWxO2 Materials Libraries
ACS Combinatorial Science Pub Date : 2018-03-05 00:00:00 , DOI: 10.1021/acscombsci.7b00192 Xiao Wang 1 , Detlef Rogalla 2 , Alfred Ludwig 1
ACS Combinatorial Science Pub Date : 2018-03-05 00:00:00 , DOI: 10.1021/acscombsci.7b00192 Xiao Wang 1 , Detlef Rogalla 2 , Alfred Ludwig 1
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The mechanical stress change of VO2 film substrate combinations during their reversible phase transformation makes them promising for applications in micro/nanoactuators. V1–xWxO2 thin film libraries were fabricated by reactive combinatorial cosputtering to investigate the effects of the addition of W on mechanical and other transformation properties. High-throughput characterization methods were used to systematically determine the composition spread, crystalline structure, surface topography, as well as the temperature-dependent phase transformation properties, that is, the hysteresis curves of the resistance and stress change. The study indicates that as x in V1–xWxO2 increases from 0.007 to 0.044 the crystalline structure gradually shifts from the VO2 (M) phase to the VO2 (R) phase. The transformation temperature decreases by 15 K/at. % and the resistance change is reduced to 1 order of magnitude, accompanied by a wider transition range and a narrower hysteresis with a minimal value of 1.8 K. A V1–xWxO2 library deposited on a Si3N4/SiO2-coated Si cantilever array wafer was used to study simultaneously the temperature-dependent stress change σ(T) of films with different W content through the phase transformation. Compared with σ(T) of ∼700 MPa of a VO2 film, σ(T) in V1–xWxO2 films decreases to ∼250 MPa. Meanwhile, σ(T) becomes less abrupt and occurs over a wider temperature range with decreased transformation temperatures.
中文翻译：
W的含量对薄膜基体组合的相变特性和相关应力变化的影响（通过薄膜V 1– x W x O 2材料库的制造和表征研究）
VO 2薄膜基材组合在其可逆相变过程中的机械应力变化使其在微/纳米致动器中的应用前景广阔。V 1– x W x O 2薄膜库是通过反应性组合共溅射制备的，目的是研究添加W对机械性能和其他转变性能的影响。高通量表征方法用于系统地确定组成扩散，晶体结构，表面形貌以及与温度有关的相变特性，即电阻和应力变化的磁滞曲线。研究表明，作为X为V 1- XW x O 2从0.007增加到0.044，晶体结构从VO 2（M）相逐渐转变为VO 2（R）相。转变温度降低15 K / at。％，电阻变化减小到1个数量级，同时具有更宽的过渡范围和更窄的磁滞，最小值为1.8K。AV 1– x W x O 2库沉积在Si 3 N 4 / SiO 2上涂覆硅悬臂阵列晶片同时研究温度相关应力变化σ（T通过相变获得具有不同W含量的薄膜）。与σ（相比Ť一个VO的~700兆帕）2薄膜，σ（Ť）以V 1- X w ^ X Ò 2层膜减小到〜250兆帕。同时，σ（T）的突变变小，并在较宽的温度范围内发生，且转变温度降低。
更新日期：2018-03-05
中文翻译：
W的含量对薄膜基体组合的相变特性和相关应力变化的影响（通过薄膜V 1– x W x O 2材料库的制造和表征研究）
VO 2薄膜基材组合在其可逆相变过程中的机械应力变化使其在微/纳米致动器中的应用前景广阔。V 1– x W x O 2薄膜库是通过反应性组合共溅射制备的，目的是研究添加W对机械性能和其他转变性能的影响。高通量表征方法用于系统地确定组成扩散，晶体结构，表面形貌以及与温度有关的相变特性，即电阻和应力变化的磁滞曲线。研究表明，作为X为V 1- XW x O 2从0.007增加到0.044，晶体结构从VO 2（M）相逐渐转变为VO 2（R）相。转变温度降低15 K / at。％，电阻变化减小到1个数量级，同时具有更宽的过渡范围和更窄的磁滞，最小值为1.8K。AV 1– x W x O 2库沉积在Si 3 N 4 / SiO 2上涂覆硅悬臂阵列晶片同时研究温度相关应力变化σ（T通过相变获得具有不同W含量的薄膜）。与σ（相比Ť一个VO的~700兆帕）2薄膜，σ（Ť）以V 1- X w ^ X Ò 2层膜减小到〜250兆帕。同时，σ（T）的突变变小，并在较宽的温度范围内发生，且转变温度降低。
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