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Generation of 320 mW at 10.20 μm based on CdSe Long-wave Infrared Crystal
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2018-06-01 , DOI: 10.1016/j.jcrysgro.2018.03.012
Jian Wang , Ligang Yuan , Yingwu Zhang , Guo Chen , Hongjuan Cheng , Yanzhao Gao

Abstract CdSe single crystal, with the sizes of ∼54 mm in diameter and ∼25 mm in length, was grown by a high pressure vertical gradient freeze (HPVGF) technique using (0 0 1)-oriented seed. The CdSe crystal was characterized with transmission spectrophotometer. The transmission spectra showed that the infrared transmission was above 68% and the mean absorption coefficient was 0.041 cm−1 in the range of 2.5–20 μm. Using fabricated CdSe crystal with the dimensions of 6 mm × 10 mm × 44 mm, we demonstrated an optical parametric oscillator (OPO) pumped by a 2.05 μm Ho:YLF laser at a pulse repetition frequency of 5 kHz. Up to 320 mW output was obtained at the idler wavelength of 10.20 μm with a pump power of 18.06 W. 320 mW at 10.20 μm, to our knowledge, was the highest power obtained with a 2.05 μm laser-pumped CdSe OPO.

中文翻译:

基于 CdSe 长波红外晶体在 10.20 μm 处产生 320 mW

摘要 通过高压垂直梯度冷冻 (HPVGF) 技术使用 (0 0 1) 取向的种子生长了直径约 54 mm、长度约 25 mm 的 CdSe 单晶。CdSe晶体用透射分光光度计表征。透射光谱显示红外透射率在 68% 以上,平均吸收系数在 2.5-20 μm 范围内为 0.041 cm-1。使用尺寸为 6 mm × 10 mm × 44 mm 的 CdSe 晶体,我们展示了一种由 2.05 μm Ho:YLF 激光器泵浦的光学参量振荡器 (OPO),脉冲重复频率为 5 kHz。在 10.20 μm 的空闲波长下获得高达 320 mW 的输出,泵浦功率为 18.06 W。据我们所知,10.20 μm 处的 320 mW 是使用 2.05 μm 激光泵浦 CdSe OPO 获得的最高功率。
更新日期:2018-06-01
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