Abstract Double Shockley-type stacking faults (2SSFs) formed in 4H-SiC epitaxial films with a dopant concentration of 1.0 × 10 16 cm −3 were characterized using grazing incident X-ray topography and high-resolution scanning transmission electron microscopy. The origins of 2SSFs were investigated, and it was found that 2SSFs in the epitaxial layer originated from narrow SFs with a double Shockley structure in the substrate. Partial dislocations formed between 4H-type and 2SSF were also characterized. The shapes of 2SSFs are related with Burgers vectors and core types of the two Shockley partial dislocations.

中文翻译：

---

在轻掺杂 4H-SiC 外延膜中形成双肖克利型堆垛层错的表征

摘要 使用掠入射 X 射线形貌和高分辨率扫描透射电子显微镜表征了在掺杂浓度为 1.0 × 10 16 cm -3 的 4H-SiC 外延膜中形成的双肖克利型堆垛层错 (2SSF)。研究了2SSFs的起源，发现外延层中的2SSFs起源于衬底中具有双肖克利结构的窄SFs。还表征了 4H 型和 2SSF 之间形成的部分位错。2SSF 的形状与两个 Shockley 部分位错的 Burgers 矢量和核心类型有关。