Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

需要开发具有高厚度均匀性的大规模石墨薄膜以用于工业应用。厚度范围从3到20 nm的石墨薄膜几乎没有报道，而在该范围内实现厚度均匀性是一项艰巨的任务。在这项研究中，展示了一种在Ni上生长20 nm厚的石墨膜的工艺，该工艺具有改善的厚度均匀性，并与常规生长工艺进行了比较。在通过该方法生长的膜中，表面粗糙度和覆盖率得到改善，并且没有观察到皱纹。对膜结构的观察揭示了改善和生长机理的原因。