Abstract A novel method for manufacture of copper(II) oxide for copper electroplating solution is proposed in this paper. The copper(II) oxide was produced through two chemical reaction steps without sintering process after refinement of waste lead frame etching solution. The experimental major parameters were the amount of additives for first and second step, sodium carbonate and sodium hydroxide, respectively, to evaluate reaction characteristics. Also, the liquidity (angle of repose), solubility to sulfuric acid, chloric ion concentration and thickness of dimple thickness of plating hole were verified for the physical properties of copper(II) oxide as electroplating material. The reaction molar ratio of sodium carbonate was low, and C u 2 C O 3 was generated more than C u ( O H ) 2 .The optimum reaction mole ratio of sodium carbonate to copper chloride was revealed as 1.5. The optimum usage of sodium hydroxide for manufacture of copper(II) oxide using basic copper carbonate, produced at first reaction step, was 150 g. In these conditions, the average particle size of copper(II) oxide, the dissolution time for sulfuric acid, and the angle of repose were 21.49 μm, 62 s, and 35.5°, respectively. The yield of copper(II) oxide was 98.0 wt.%, for this optimum usage. Also, the via-filling hole thickness was 13.5 μm, which satisfies general via-filling hole thickness range, less than 15 μm.

中文翻译：

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利用引线框架蚀刻废料制备电镀用CuO粉末

摘要 本文提出了一种制备铜电镀液用氧化铜(II)的新方法。氧化铜（II）是在对废弃引线框架蚀刻液进行精制后，通过两个化学反应步骤生产的，无需烧结过程。实验的主要参数是第一步和第二步的添加剂量，分别是碳酸钠和氢氧化钠，以评估反应特性。此外，还验证了作为电镀材料的氧化铜（II）的物理性能的流动性（休止角）、对硫酸的溶解度、氯离子浓度和镀孔凹坑厚度的厚度。碳酸钠的反应摩尔比低，产生的C u 2 CO 3 多于C u (OH) 2 。碳酸钠与氯化铜的最佳反应摩尔比为1.5。使用碱式碳酸铜生产氧化铜 (II) 的氢氧化钠的最佳用量为 150 g。在这些条件下，氧化铜 (II) 的平均粒径、硫酸溶解时间和休止角分别为 21.49 μm、62 s 和 35.5°。对于这种最佳用途，氧化铜 (II) 的产率为 98.0 重量％。此外，过孔填充孔厚度为13.5μm，满足一般的过孔填充孔厚度范围，小于15μm。硫酸的溶解时间和休止角分别为 21.49 μm、62 s 和 35.5°。对于这种最佳用途，氧化铜 (II) 的产率为 98.0 重量％。此外，过孔填充孔厚度为13.5μm，满足一般的过孔填充孔厚度范围，小于15μm。硫酸的溶解时间和休止角分别为 21.49 μm、62 s 和 35.5°。对于这种最佳用途，氧化铜 (II) 的产率为 98.0 重量％。此外，过孔填充孔厚度为13.5μm，满足一般的过孔填充孔厚度范围，小于15μm。