当前位置：
X-MOL 学术
›
Adv. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Memristors: Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches (Adv. Electron. Mater. 3/2018)
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-03-09 , DOI: 10.1002/aelm.201870014 Yu Zhang 1, 2 , Xiaoyang Lin 1 , Jean-Paul Adam 2 , Guillaume Agnus 2 , Wang Kang 1 , Wenlong Cai 1 , Jean-Rene Coudevylle 2 , Nathalie Isac 2 , Jianlei Yang 1 , Huaiwen Yang 1 , Kaihua Cao 1, 3 , Hushan Cui 1, 3 , Deming Zhang 1 , Youguang Zhang 1 , Chao Zhao 1, 3 , Weisheng Zhao 1 , Dafine Ravelosona 2
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-03-09 , DOI: 10.1002/aelm.201870014 Yu Zhang 1, 2 , Xiaoyang Lin 1 , Jean-Paul Adam 2 , Guillaume Agnus 2 , Wang Kang 1 , Wenlong Cai 1 , Jean-Rene Coudevylle 2 , Nathalie Isac 2 , Jianlei Yang 1 , Huaiwen Yang 1 , Kaihua Cao 1, 3 , Hushan Cui 1, 3 , Deming Zhang 1 , Youguang Zhang 1 , Chao Zhao 1, 3 , Weisheng Zhao 1 , Dafine Ravelosona 2
Affiliation
|
In article 1700461, Weisheng Zhao and co‐workers demonstrate a heterogeneous memristive device based on a magnetic tunnel junction nanopillar surrounded by resistive filaments. It features spin transfer torque fast switching for computation together with multilevel resistive switching for non‐volatile memory, providing perspectives to achieve emerging computing paradigms and overcome the power dissipation bottleneck, e.g., logic‐in‐memory and neuromorphic computing.
中文翻译：
忆阻器：由磁隧道结纳米柱和电阻式硅开关围绕的异质忆阻器件（Adv。Electron。Mater。3/2018）
在文章1700461中，赵维生及其同事演示了一种基于磁隧道结纳米柱的异质忆阻器件，该柱被电阻丝包围。它具有用于计算的自旋转移力矩快速切换以及用于非易失性存储器的多级电阻切换，从而为实现新兴的计算范例和克服功耗瓶颈（例如内存中的逻辑和神经形态计算）提供了前景。
更新日期：2018-03-09
中文翻译：
忆阻器：由磁隧道结纳米柱和电阻式硅开关围绕的异质忆阻器件（Adv。Electron。Mater。3/2018）
在文章1700461中，赵维生及其同事演示了一种基于磁隧道结纳米柱的异质忆阻器件，该柱被电阻丝包围。它具有用于计算的自旋转移力矩快速切换以及用于非易失性存储器的多级电阻切换，从而为实现新兴的计算范例和克服功耗瓶颈（例如内存中的逻辑和神经形态计算）提供了前景。
京公网安备 11010802027423号