Epitaxial films of bismuth telluride topological insulators have received increasing attention due to their potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to the lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.Epitaxial films of bismuth telluride topological insulators have received increasing attention due to their potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to the lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.

中文翻译：

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外延碲化铋拓扑绝缘体薄膜中多次 x 射线散射的混合反射

碲化铋拓扑绝缘体的外延膜因其在自旋电子学和量子计算中的潜在应用而受到越来越多的关注。外延膜最重要的特性之一是由于横向晶格失配而存在界面缺陷，因为电活性缺陷会严重影响器件性能。通过描述立方基板上六方碲化铋薄膜的混合反射，面内晶格失配的表征精度至少比使用其他 X 射线衍射方法高 20 倍，提供了 0.007% 横向晶格失配的明确证据，与应力松弛一致与膜结构中的范德华间隙有关。碲化铋拓扑绝缘体的外延膜因其在自旋电子学和量子计算中的潜在应用而受到越来越多的关注。外延膜最重要的特性之一是由于横向晶格失配而存在界面缺陷，因为电活性缺陷会严重影响器件性能。通过描述立方基板上六方碲化铋薄膜的混合反射，面内晶格失配的表征精度至少比使用其他 X 射线衍射方法高 20 倍，提供了 0.007% 横向晶格失配的明确证据，与应力松弛一致与膜结构中的范德华间隙有关。外延膜最重要的特性之一是由于横向晶格失配而存在界面缺陷，因为电活性缺陷会严重影响器件性能。通过描述立方基板上六方碲化铋薄膜的混合反射，面内晶格失配的表征精度至少比使用其他 X 射线衍射方法高 20 倍，提供了 0.007% 横向晶格失配的明确证据，与应力松弛一致与膜结构中的范德华间隙有关。外延膜最重要的特性之一是由于横向晶格失配而存在界面缺陷，因为电活性缺陷会严重影响器件性能。通过描述立方基板上六方碲化铋薄膜的混合反射，面内晶格失配的表征精度至少比使用其他 X 射线衍射方法高 20 倍，提供了 0.007% 横向晶格失配的明确证据，与应力松弛一致与膜结构中的范德华间隙有关。